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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

FJPF5021O

FJPF5021O

FJPF5021O Power Bipolar Transistor; FJPF5021O
BD545A-S

BD545A-S

BD545A-S Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3; BD545A-S
BC636TAR

BC636TAR

BC636TAR Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92; BC636TAR
VI-B1L-IW

VI-B1L-IW

VI-B1L-IW DC-DC Booster Module, 1 Output, 100W, Hybrid, 4.600 X 2.400 INCH, 0.500 INCH HEIGHT, MODULE-9; VI-B1L-IW
KBP202G

KBP202G

KBP202G Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBP, 4 PIN; KBP202G
FCP36N60N

FCP36N60N

FCP36N60N Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220, 1000-TUBE; FCP36N60N
FM400TU-2A

FM400TU-2A

FM400TU-2A Power Field-Effect Transistor, 200A I(D), 100V, 0.002ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-21; FM400TU-2A
VI-24B-EV

VI-24B-EV

VI-24B-EV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-24B-EV
DD200GB40

DD200GB40

DD200GB40 Rectifier Diode; DD200GB40
APTGT25H120T1G

APTGT25H120T1G

APTGT25H120T1G Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT25H120T1G