F4-30R06W1E3 Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, MODULE-25; F4-30R06W1E3
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.