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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

2SC3942

2SC3942

2SC3942 Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULLPACK-3; 2SC3942
BUT11TU

BUT11TU

BUT11TU NPN Silicon Transistor, 1000-TUBE; BUT11TU
3STL2540

3STL2540

3STL2540 Low voltage high performance PNP power transistor; 3STL2540
2N2369AUA

2N2369AUA

2N2369AUA Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon,; 2N2369AUA
APTGT100SK170TG

APTGT100SK170TG

APTGT100SK170TG Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN; APTGT100SK170TG
CM200E3U-12H

CM200E3U-12H

CM200E3U-12H IGBT Module In-stock / Mitsubishi: 600V 200A high power switching. 90-day warranty, motor control. Global fast shipping. Get quote.
VS-T70HF20

VS-T70HF20

VS-T70HF20 Rectifier Diode, 1 Phase, 1 Element, 70A, 200V V(RRM), Silicon, MODULE-2; VS-T70HF20
2N4416A

2N4416A

2N4416A RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, TO-72, 3 PIN; 2N4416A
VI-J2M-EZ

VI-J2M-EZ

VI-J2M-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-J2M-EZ
2SC3063

2SC3063

2SC3063 Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN; 2SC3063