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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

CAK-001AF

CAK-001AF

CAK-001AF CAK-001AF; CAK-001AF
NJW3281G

NJW3281G

NJW3281G Bipolar Power Transistors, Complementary, 15 A, 250 V NPN, TO-3P-3LD, 30-TUBE; NJW3281G
MCH3109-TL-E

MCH3109-TL-E

MCH3109-TL-E Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3, SC 70FL / MCPH3, 3000-REEL; MCH3109-TL-E
2N930

2N930

2N930 Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA,; 2N930
VI-B5D-CU

VI-B5D-CU

VI-B5D-CU DC-DC Booster Module, 1 Output, 200W, Hybrid, PACKAGE-9; VI-B5D-CU
MRF7S19210HSR3

MRF7S19210HSR3

MRF7S19210HSR3 RF Power Field-Effect Transistor; MRF7S19210HSR3
SK300DA100D

SK300DA100D

SK300DA100D Power Bipolar Transistor, 300A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin,; SK300DA100D
W0503RC22

W0503RC22

W0503RC22 DIODE 370 A, 2200 V, SILICON, RECTIFIER DIODE, Rectifier Diode; W0503RC22
F1842CCD1400

F1842CCD1400

F1842CCD1400 Rectifier Diode, 1 Phase, 2 Element, 40A, 1400V V(RRM), Silicon, MODULE-3; F1842CCD1400
EMA5T2R

EMA5T2R

EMA5T2R Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT5, 5 PIN; EMA5T2R