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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

ST180S04P0V

ST180S04P0V

ST180S04P0V Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, METAL, TO-93, 3 PIN; ST180S04P0V
VSKTF180-08HK

VSKTF180-08HK

VSKTF180-08HK Silicon Controlled Rectifier, 400A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, ROHS COMPLIANT, MAGN-A-PAK-7
V24C24C100AL

V24C24C100AL

V24C24C100AL DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid; V24C24C100AL
VI-240-CW

VI-240-CW

VI-240-CW DC-DC Regulated Power Supply Module, 1 Output, 100W, Hybrid,; VI-240-CW
V375C3V3C75AL

V375C3V3C75AL

V375C3V3C75AL DC-DC Regulated Power Supply Module, 1 Output, 75W, Hybrid; V375C3V3C75AL
T607101554BT

T607101554BT

T607101554BT Silicon Controlled Rectifier, 235A I(T)RMS, 235000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-93, TO-93, 3 PIN; T607101554BT
D66EV7

D66EV7

D66EV7 Power Bipolar Transistor, 50A I(C), 1-Element; D66EV7
NSBA143EF3T5G

NSBA143EF3T5G

NSBA143EF3T5G PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 4.7 k, 4.7 k, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBA143EF3T5G
PS12017-A

PS12017-A

PS12017-A Micro Peripheral IC; PS12017-A
APTGT75A120T1G

APTGT75A120T1G

APTGT75A120T1G Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; APTGT75A120T1G