2MBI100F-120 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN; 2MBI100F-120
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.