FM50DY-9 Power Field-Effect Transistor, 50A I(D), 450V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM50DY-9
High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.