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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

SP8M9TB

SP8M9TB

SP8M9TB Power Field-Effect Transistor, 9A I(D), 30V, 0.025ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; SP8M9TB
SCT2160KEC

SCT2160KEC

SCT2160KEC Power Field-Effect Transistor, 22A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3; SCT2160KEC
MBRP400100CTLG

MBRP400100CTLG

MBRP400100CTLG 200A, 100V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 357C-03, POWERTAP II, 2 PIN; MBRP400100CTLG
6RI50E-060

6RI50E-060

6RI50E-060 Bridge Rectifier Diode, 3 Phase, 50A, 600V V(RRM), Silicon, R605A, 5 PIN; 6RI50E-060
DH2X61-16A

DH2X61-16A

DH2X61-16A Rectifier Diode, Avalanche, 1 Phase, 2 Element, 1600V V(RRM), Silicon,; DH2X61-16A
VS-ST700C12L0

VS-ST700C12L0

VS-ST700C12L0 Silicon Controlled Rectifier,; VS-ST700C12L0
SGSD200

SGSD200

SGSD200 25A, 80V, PNP, Si, POWER TRANSISTOR, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3; SGSD200
VSKTF200-08HJ

VSKTF200-08HJ

VSKTF200-08HJ Silicon Controlled Rectifier, 444A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, ROHS COMPLIANT, MAGN-A-PAK-7; VSKTF200-08HJ
VS-1KAB20E

VS-1KAB20E

VS-1KAB20E Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon, ROHS COMPLIANT, D-38, 4 PIN; VS-1KAB20E
MJH11021

MJH11021

MJH11021 15 A, 250 V PNP Darlington Bipolar Power Transistor, SOT-93 (T0-218) 4 LEAD, 30-TUBE; MJH11021