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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

MPF4392

MPF4392

MPF4392 Small Signal JFET N-Channel, TO-92 (TO-226) 5.33mm Body Height, 1000-BLKBX; MPF4392
JANTXV2N3811

JANTXV2N3811

JANTXV2N3811 Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SIMILAR TO TO-78, 6 PIN; JANTXV2N3811
MRF6S9125MR1

MRF6S9125MR1

MRF6S9125MR1 RF Power Field-Effect Transistor; MRF6S9125MR1
6MBI100UC-120

6MBI100UC-120

6MBI100UC-120 IGBT Module In-stock / Fuji Electric: 1200V 100A. Integrated shunts. 90-day warranty, motor drive. Global shipping. Request pricing now.
MCH6202-TL-E

MCH6202-TL-E

MCH6202-TL-E Bipolar Transistor, (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6, SC 88FL / MCPH6, 3000-REEL; MCH6202-TL-E
T820187504DH

T820187504DH

T820187504DH Silicon Controlled Rectifier, 1175A I(T)RMS, 750000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element, T82, 3 PIN; T820187504DH
GBU4M-BP

GBU4M-BP

GBU4M-BP Bridge Rectifier Diode, 1 Phase, 4A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN; GBU4M-BP
L0103ME

L0103ME

L0103ME 4 Quadrant Logic Level TRIAC, 600V V(DRM), 1A I(T)RMS, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; L0103ME
MBR20060CT

MBR20060CT

MBR20060CT 60V 200A Silicon Schottky Rectifier in Twin Tower Package; MBR20060CT
MPS6601RLRA

MPS6601RLRA

MPS6601RLRA 1000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN; MPS6601RLRA