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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J4M-EY

VI-J4M-EY

VI-J4M-EY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J4M-EY
DTA114TE-TP

DTA114TE-TP

DTA114TE-TP Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; DTA114TE-TP
VI-JTR-CZ

VI-JTR-CZ

VI-JTR-CZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JTR-CZ
R7S00616XX

R7S00616XX

R7S00616XX Rectifier Diode, 1 Phase, 1 Element, 2020A, 600V V(RRM), Silicon,; R7S00616XX
PH75S48-5

PH75S48-5

PH75S48-5 DC-DC Regulated Power Supply Module, 1 Output, 75W,; PH75S48-5
BC33840TA

BC33840TA

BC33840TA Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; BC33840TA
VSKL250-14

VSKL250-14

VSKL250-14 Silicon Controlled Rectifier, 555A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MAGN-A-PAK-5; VSKL250-14
DSEP2X31-03A

DSEP2X31-03A

DSEP2X31-03A Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, MINIBLOC-4; DSEP2X31-03A
CM200EXS-24S

CM200EXS-24S

CM200EXS-24S Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES; CM200EXS-24S
VSKL250-16

VSKL250-16

VSKL250-16 Silicon Controlled Rectifier, 555A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MAGN-A-PAK-5; VSKL250-16