QM150DY-HK Description
IGBT Power Transistor Modules 150A/600V/GTR/2U QM150DY-HK
• IC Collector current ........................ 100A
• VCEX Collector-emitter voltage ........... 1200V
• hFE DC current gain............................... 75
• Insulated Type
• UL Recognized
• Isolation voltage Charged part to case, AC for 1 minute 2500V
• Collector dissipation TC=25°C........ 800W
• Junction temperature Tj ...................+150°C
• Storage temperature Tstg..............-40 to +125°C
• Mounting screw torque ....................3.0 *1 N·m
• Typical value Weight .....................470g
Mitsubishi Power Transistor ModuleS HIGH POWER SWITCHING USE INSULATED TYPE 100 Amp 1200 Vol
