MITSUBISHI QM50TX-HB IGBT Module

Manufacturer Part Number: QM50TX-HB Part Life Cycle Code: Obsolete Ihs Manufacturer: Mitsubishi ELECTRIC CORP Package Description: FLANGE MOUNT, R-PUFM-X11 Manufacturer: Mitsubishi Electric • IC Collector current .......................... 50A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................. 750 Risk Rank: 5.66 Collector Current-Max (IC): 50 A Configuration: COMPLEX DC Current Gain-Min (hFE): 750 Fall Time-Max (tf): 3000 ns JESD-30 Code: R-PUFM-X11 Number of Elements: 6 Number of Terminals: 11 Operating Temperature-Max: 150 °C Package Body Material: PLASTIC/EPOXY Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Polarity/Channel Type: NPN Qualification Status: Not Qualified Subcategory: BIP General Purpose Power Surface Mount: NO Terminal Form: UNSPECIFIED Terminal Position: UPPER Transistor Element Material: SILICON VCEsat-Max: 2.5 V Power Bipolar Transistor 50A I(C) 6-Element NPN Silicon Plastic/Epoxy 11 Pin