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MITSUBISHI CM100DUS-12F IGBT Module

#MITSUBISHI, #CM100DUS_12F, #IGBT_Module, #IGBT, CM100DUS-12F Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-7

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$ 35
· Date Code: 2021+
. Available Qty: 83
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CM100DUS-12F Specification

Sell CM100DUS-12F, #MITSUBISHI #CM100DUS-12F Stock, CM100DUS-12F Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-7, #IGBT_Module, #IGBT, #CM100DUS_12F
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Manufacturer Part Number: CM100DUS-12F

Pbfree Code: Yes

Part Life Cycle Code: Active

Ihs Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-XUFM-X6

Pin Count: 7

ECCN Code: EAR99

Manufacturer: Mitsubishi Electric

Risk Rank: 5.21

Additional Feature: UL RECOGNIZED

Case Connection: ISOLATED

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 600 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X6

Number of Elements: 2

Number of Terminals: 6

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 445 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-7

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