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Mitsubishi CM100DUS-12F IGBT Module

CM100DUS-12F Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-7

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 35
· Date Code: 2021+
. Available Qty: 129
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CM100DUS-12F Specification

Manufacturer Part Number: CM100DUS-12F
Pbfree Code: Yes
Part Life Cycle Code: Active
Package Description: FLANGE MOUNT, R-XUFM-X6
Pin Count: 7
ECCN Code: EAR99
Manufacturer: Mitsubishi Electric
Additional Feature: UL RECOGNIZED
Case Connection: ISOLATED
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X6
Number of Elements: 2
Number of Terminals: 6
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 445 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor 100A I(C) 600V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-7

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