CM100DUS-12F | Mitsubishi 1200V 100A Dual IGBT Module for High-Efficiency Power Conversion
Engineering Analysis of the CM100DUS-12F F-Series IGBT
Content last revised on October 2, 2025.
The Mitsubishi CM100DUS-12F is a 1200V, 100A dual IGBT module from the F-Series, specifically engineered to deliver superior efficiency in power conversion by minimizing both conduction and switching losses. Featuring key specifications of 1200V | 100A | VCE(sat) 2.2V (typ), this component provides direct engineering benefits, including a lower thermal load on system cooling apparatus and increased operational reliability. Best suited for frequency converters operating up to 20kHz, this dual module's low collector-emitter saturation voltage is critical for minimizing system-level thermal dissipation and achieving higher power density.
Application Scenarios & Value
Achieving System-Level Benefits in Industrial Power Conversion
The CM100DUS-12F is purpose-built for applications where power efficiency and thermal stability are paramount. Its performance characteristics make it a robust choice for the power stages of general-purpose inverters, AC servo drives, and uninterruptible power supplies (UPS). In the context of a Variable Frequency Drive (VFD), the module's low typical VCE(sat) of 2.2V directly reduces conduction loss—the primary source of heat generation during steady-state motor operation. This reduction in wasted energy allows design engineers to specify smaller, more cost-effective heatsinks or to operate the system reliably at higher ambient temperatures within constrained industrial enclosures. The integrated dual-element configuration, housing two IGBTs in a half-bridge topology, simplifies the power stage layout, reduces component count, and minimizes parasitic inductance compared to using discrete components, contributing to cleaner switching and improved EMI performance.
For systems demanding higher current handling in a similar voltage class, the related CM200DU-12F offers a 200A capability, providing a clear path for scaling power output.
Key Parameter Overview
Decoding the Specs for Enhanced Switching Performance
The technical specifications of the CM100DUS-12F are centered on delivering a balance of low on-state losses and efficient switching. The low VCE(sat) is a defining feature, directly impacting the thermal design of the end system. Think of VCE(sat) as the electrical "friction" of the switch; a lower value, like the 2.2V typical for this module, is analogous to a well-oiled hinge—it wastes significantly less energy as heat when current is flowing through it. This characteristic is crucial for improving the overall wall-plug efficiency of power converters. The module's thermal resistance, Rth(j-c)IC, at 0.24°C/W, quantifies the efficiency of heat transfer from the IGBT chip to the case, a critical parameter for accurate thermal modeling and ensuring long-term reliability. A lower thermal resistance value indicates a more effective pathway for heat to escape the semiconductor junction.
| Parameter | Symbol | Conditions | Value |
|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE = 0V | 1200V |
| Gate-Emitter Voltage | VGES | VCE = 0V | ±20V |
| Collector Current (DC) | IC | TC = 25°C | 100A |
| Collector Current (Pulse) | ICP | TC = 25°C, 1ms | 200A |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 100A, VGE = 15V, Tj = 25°C | 2.2V (Typ), 2.7V (Max) |
| Total Power Dissipation | PC | TC = 25°C | 520W |
| Thermal Resistance (Junction to Case, IGBT) | Rth(j-c)IC | 0.24°C/W | |
| Isolation Voltage | Viso | Terminals to baseplate, AC 1 min. | 2500Vrms |
Download the CM100DUS-12F datasheet for detailed specifications and performance curves.
Frequently Asked Questions (FAQ)
What is the primary benefit of the low 2.2V typical VCE(sat) in the CM100DUS-12F?
The low VCE(sat) directly reduces conduction power loss (P_loss = VCE(sat) * IC), resulting in less heat generation. This allows engineers to design more compact and cost-effective cooling systems, improves overall energy efficiency, and enhances the module's long-term reliability by lowering the operating junction temperature.
How does the dual-element configuration of the CM100DUS-12F simplify inverter design?
By integrating two IGBTs in a standard half-bridge configuration, the module reduces the physical footprint on the PCB and simplifies the gate drive and power bus bar layout. This pre-packaged solution minimizes parasitic inductances between switches that can occur with discrete components, leading to cleaner switching waveforms and potentially lower voltage overshoots. What is the advantage of its integrated dual-element configuration? It simplifies half-bridge topology design and reduces stray inductance.
Is the CM100DUS-12F suitable for high-frequency switching applications?
Yes, the CM100DUS-12F is part of Mitsubishi's F-Series, which is optimized for a balance between low conduction losses and efficient switching. The datasheet provides switching characteristics (ton, toff) that support its use in applications like motor drives and power supplies operating in the typical PWM frequency range up to 20kHz, where minimizing total power loss is a key design goal.
Strategic Value in System Design
Selecting the CM100DUS-12F is a strategic decision for systems where operational efficiency and long-term reliability are key performance indicators. Its design, focused on minimizing power loss, directly contributes to a lower total cost of ownership by reducing energy consumption and lessening the thermal burden on associated components. This focus on efficiency aligns with increasing global standards for energy conservation in industrial equipment, making it a forward-looking choice for new and upgraded power conversion platforms. The module's robust electrical isolation and industry-standard packaging further streamline manufacturing and safety compliance, solidifying its role as a dependable building block for high-performance power electronics from a trusted manufacturer like Mitsubishi Electric.
