Semikron SEMiX604GB12E4S IGBT Module

SEMiX604GB12E4S Features

• Homogeneous Si

• Trench = Trenchgate technology

• VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

• UPS

• electronic Welding

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:600A

Collector current Icp:1800A

Collector power dissipation Pc:180W

Collector-Emitter voltage VCES:1200V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +175°C

weight 400g

SEMiX® 4s Trench IGBT Modules 1200V600~1800A