#SEMIKRON, #SKM294F, #IGBT_Module, #IGBT, SKM294F Power Field-Effect Transistor, 18A I(D), 1000V, 0.63ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconducto
Manufacturer Part Number: SKM294FPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: SemikronRisk Rank: 5.83Case Connection: ISOLATEDConfiguration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 1000 VDrain Current-Max (Abs) (ID): 18 ADrain Current-Max (ID): 18 ADrain-source On Resistance-Max: 0.63 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 600 pFJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 400 WPower Dissipation-Max (Abs): 400 WPulsed Drain Current-Max (IDM): 72 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 18A I(D), 1000V, 0.63ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET