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Semikron SKM300GAL12E4 IGBT Module

Semikron SKM300GAL12E4: A robust 1200V/300A IGBT4 module. Engineered with a copper baseplate for superior thermal stability and power cycling in high-reliability industrial applications.

· Categories: IGBT Module
· Manufacturer: Semikron
· Price: US$ 43
· Date Code: 2024+
. Available Qty: 283
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SKM300GAL12E4 Specification

SKM300GAL12E4: High-Reliability 1200V IGBT Module

Content last revised on October 27, 2025.

Engineering a New Standard in Drive Performance and Thermal Stability

A Distributor's Technical Perspective on the SEMITRANS 3 IGBT4 Module

The Semikron SKM300GAL12E4 is a SEMITRANS® 3 IGBT4 module engineered for high-reliability power conversion systems demanding robust thermal management and proven operational endurance. Delivering benchmark performance with specifications of 1200V and a 300A nominal current, this module integrates 4th generation trench IGBT technology with a soft-switching CAL4 freewheeling diode. Key engineering benefits include superior power cycling capability and simplified thermal design, stemming from its advanced insulated copper baseplate. This module directly addresses the critical need for long-term stability in high-frequency industrial applications. For systems requiring higher current handling under similar voltage conditions, the related SKM400GAR12T4 offers a seamless upgrade path.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The SKM300GAL12E4's specifications are tailored for demanding power conversion applications where both electrical efficiency and thermal stability are paramount. The following table highlights the key performance metrics that empower engineers to design with confidence.

Parameter Value Conditions
Collector-Emitter Voltage (Vces) 1200 V Tj = 25 °C
Continuous Collector Current (Ic) 422 A Tc = 25 °C
Nominal Collector Current (Ic nom) 300 A Tc = 80 °C
Collector-Emitter Saturation Voltage (Vce sat) 1.7 V (typ.) / 2.15 V (max) Ic = 300 A, Tj = 25 °C
Gate-Emitter Threshold Voltage (Vge(th)) 5.8 V (typ.) Ic = 12 mA
Total Power Dissipation (Ptot) 1650 W per IGBT, Tc = 25 °C
Junction Temperature (Tj) -40 to +175 °C Operating Range
Thermal Resistance, Junction to Case (Rth(j-c)) 0.075 K/W per IGBT

Note: The parameters listed above are highlights. For comprehensive specifications, characteristic curves, and safe operating areas, please refer to the official documentation.

Download the SKM300GAL12E4 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Demanding Industrial Drives

The SKM300GAL12E4 is best suited for high-power, high-frequency applications where operational reliability is non-negotiable. Its robust thermal design makes it an excellent choice for systems with challenging load profiles.

High-Fidelity Engineering Scenario: Consider a Variable Frequency Drive (VFD) controlling a large industrial motor for a materials conveyor system. Such systems experience high inrush currents during startup and fluctuating loads, generating significant thermal stress on power electronics. The SKM300GAL12E4's low thermal resistance (Rth(j-c)) of 0.075 K/W is critical here. This superior thermal conductivity, facilitated by the Direct Bonded Copper (DBC) baseplate, ensures efficient heat evacuation from the IGBT and diode chips to the heatsink. This is analogous to a wider pipe allowing more water to flow; the lower thermal resistance allows more heat to be dissipated, preventing the junction temperature from exceeding its maximum limit of 175°C. The direct result for a VFD designer is a more compact heatsink design, leading to higher overall power density and, crucially, enhanced system reliability and longer service life under strenuous industrial conditions.

This module's capabilities are optimized for applications including:

  • High-power motor drives and Servo Drive systems
  • DC/DC converters and brake choppers
  • Switched-mode power supplies
  • Renewable energy inverters

For integrated drive system designs, pairing this module with a dedicated gate driver like the SKHI 24 R can further optimize switching performance and ensure robust protection.

Technical Deep Dive

A Closer Look at the Thermal Architecture for Long-Term Reliability

The long-term reliability of a power module is fundamentally tied to its thermal management architecture. The SKM300GAL12E4 utilizes an insulated copper baseplate with Direct Bonded Copper (DBC) technology, which forms the cornerstone of its thermal performance. This design approach eliminates the need for a separate ceramic insulator between the module and the heatsink, creating a more direct and efficient path for heat dissipation. Think of the DBC baseplate as the foundation of a skyscraper; it's not just a mounting surface, but a critical structural element designed to distribute the load—in this case, thermal load—evenly and efficiently to the ground (the heatsink). This construction minimizes thermal resistance and improves the module's power cycling capability, which is a measure of its ability to withstand repeated temperature fluctuations without mechanical failure. For engineers, this translates to a power module that can endure the rigorous start-stop cycles and load variations typical in industrial environments, reducing the risk of fatigue-related failures over the system's lifespan.

Frequently Asked Questions (FAQ)

What is the primary benefit of the module's 4th generation CAL4 diode?
The CAL4 (Controlled Axial Lifetime) diode is engineered for soft switching behavior. This minimizes voltage overshoots and oscillations during the diode's turn-off phase, which in turn reduces electromagnetic interference (EMI) and lessens the stress on the complementary IGBT. This feature simplifies the design of snubber circuits and improves overall system reliability.

How does the VCE(sat) of 1.7V (typ.) impact system efficiency?
The Collector-Emitter Saturation Voltage (VCE(sat)) is the voltage drop across the IGBT when it is fully turned on. A lower VCE(sat) directly translates to lower conduction losses (Power Loss = VCE(sat) x Collector Current). With a typical VCE(sat) of 1.7V at its nominal 300A current, the SKM300GAL12E4 minimizes the heat generated during the on-state, leading to higher overall converter efficiency and reduced cooling requirements for the system.

For further inquiries or to discuss how the SKM300GAL12E4 can be integrated into your specific power system design, please contact our technical support team.

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