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Semikron SKM450GB12E4 IGBT Module

Semikron Danfoss SKM450GB12E4: 1200V/450A IGBT module engineered for superior thermal management. Delivers robust reliability and power density for demanding industrial applications.

· Categories: IGBT Module
· Manufacturer: Semikron
· Price: US$ 51
· Date Code: 2024+
. Available Qty: 44
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SKM450GB12E4 Specification

SKM450GB12E4 | 1200V 450A Half-Bridge IGBT Module | SEMITRANS 4

Engineering a New Standard for Thermal Reliability and Power Density

Content last revised on October 2, 2025.

The SKM450GB12E4 from Semikron Danfoss is a high-reliability 1200V half-bridge IGBT module engineered for superior thermal management, enabling robust and power-dense inverter designs for demanding industrial applications. This SEMITRANS® 4 module integrates advanced Trench IGBT technology with CAL 4 free-wheeling diodes to deliver an optimal balance of efficiency and durability. Key specifications include: 1200V | 450A | Rth(j-c) 0.050 K/W. This design provides two primary engineering benefits: superior heat dissipation and exceptional overload resilience. What is the primary benefit of its internal construction? The Al2O3 substrate ensures high electrical isolation while providing an efficient thermal path. For high-current motor drives requiring significant thermal headroom and reliability, the SKM450GB12E4 offers a strategically sound design choice.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the SKM450GB12E4 are optimized for high-power switching applications where thermal performance and electrical stability are critical. The parameters below highlight its capacity for robust operation under demanding load conditions.

Parameter Symbol Condition Value
Collector-Emitter Voltage VCES Tj = 25 °C 1200 V
Nominal Collector Current ICnom Tcase = 80 °C 450 A
Repetitive Peak Collector Current ICRM tp = 1 ms 900 A
Collector-Emitter Saturation Voltage VCE(sat) IC = 450 A, Tj = 125 °C 1.95 V (typ.)
Gate-Emitter Threshold Voltage VGE(th) VGE = VCE, IC = 18 mA 5.8 V (typ.)
Total Switching Energy (IGBT) Eoff IC = 450 A, VCE = 600 V, Tj = 125 °C 110 mJ (typ.)
Thermal Resistance, Junction-to-Case Rth(j-c) per IGBT 0.050 K/W
Isolation Test Voltage VISOL AC, sinusoidal, t = 1 min. 4000 V

Download the SKM450GB12E4 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Power Industrial Drives

The SKM450GB12E4 is ideally suited for high-power conversion systems where reliability under cyclical and heavy loads is a primary design criterion. Its robust thermal architecture and high current handling capabilities deliver significant value in applications such as industrial motor drives, large-scale UPS (Uninterruptible Power Supply) systems, and grid-tied solar inverters.

Consider the engineering challenge of designing a Variable Frequency Drive (VFD) for a heavy-duty industrial conveyor system. The drive must handle high start-up currents and manage the heat generated during continuous operation. The SKM450GB12E4 directly addresses this challenge. Its low thermal resistance (Rth(j-c)) of 0.050 K/W provides an extremely efficient path for heat to escape the semiconductor junction. Think of thermal resistance as the width of a highway for heat; a lower Rth value is like a wider, multi-lane superhighway, allowing heat to dissipate quickly and preventing thermal bottlenecks. This simplifies heatsink design, allows for greater power density, and ultimately extends the operational lifetime of the entire drive system. Furthermore, its 900A peak current rating provides the necessary resilience to withstand the demanding torque requirements during motor startup without risking device failure. For systems requiring even greater current capacity, the SKM600GB12M7 offers a higher power rating within a comparable technology family.

Technical Deep Dive

Anatomy of a Thermally-Optimized Module

The long-term reliability of the SKM450GB12E4 is not accidental; it is engineered into its physical construction. The module's thermal performance is a direct result of its carefully selected material stack-up. Heat generated in the Trench IGBT and CAL 4 diode chips must traverse several layers to reach the heatsink. The core of this thermal path is the Aluminum Oxide (Al2O3) Direct Copper Bonded (DCB) substrate. Unlike less robust materials, Al2O3 offers excellent thermal conductivity paired with very high dielectric strength, enabling the impressive 4000V isolation rating. This construction effectively decouples electrical performance from thermal management, allowing engineers to optimize both. This integrated approach, combined with a robust copper baseplate, ensures minimal thermal impedance and maximum heat transfer, which is critical for maintaining junction temperatures within safe limits during high-power PWM (Pulse Width Modulation) operation.

Frequently Asked Questions (FAQ)

How does the Rth(j-c) of 0.050 K/W directly impact heatsink selection and system power density?A lower thermal resistance from junction to case means heat is transferred more efficiently out of the IGBT. This allows engineers to either use a smaller, more cost-effective heatsink for the same power level or push more power through the module while maintaining the same junction temperature. The result is a more compact, power-dense, and potentially lower-cost system design.

What specific advantages do the integrated CAL 4 free-wheeling diodes offer in an inverter design?CAL 4 (Controlled Axial Lifetime) diodes are engineered for "soft" recovery characteristics. This means they turn off more smoothly, generating less high-frequency noise (EMI) and voltage overshoot compared to standard diodes. For design engineers, this translates to reduced requirements for snubber circuits, simpler EMI filtering, and improved overall system efficiency and reliability.

The module has a peak current rating (ICRM) of 900A, double its nominal rating. In which application phase is this most critical?This high overload capability is most critical during transient events, such as motor inrush current at startup, brake chopper operation, or short-term grid fault conditions. It provides a safety margin that prevents the module from failing during predictable, short-duration stress events, enhancing the overall ruggedness of the end application.

Is the SKM450GB12E4 suitable for paralleling to achieve higher current output?Yes, the positive temperature coefficient of the VCE(sat) is a characteristic feature that facilitates current sharing when paralleling modules. However, successful paralleling requires careful attention to symmetrical busbar layout, gate drive design, and thermal management to ensure balanced load distribution. For detailed guidance, it is essential to consult the manufacturer's application notes on IGBT paralleling.

A Strategic Component for Future-Proof Power Systems

The Semikron Danfoss SKM450GB12E4 is more than just a set of specifications; it is a foundational building block for creating efficient, reliable, and power-dense conversion systems. Its focus on superior thermal management provides engineers with the design margin needed to build next-generation industrial drives and renewable energy inverters that meet evolving performance and longevity standards. By integrating robust thermal design with efficient switching technology, this module enables the development of systems with a lower total cost of ownership.

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