Content last revised on August 28, 2026
Features
●V-IGBT = 6. Generation TrenchV-IGBT (Fuj)
●CAL4 = Soft switching 4. Generation CAL -diode
●Isolated copper baseplate using DBC technology (Direct Copper Bonding)
●Increased power cycling capability
●With integrated gate resistor
●Low switching losses at high di/dt
Typical Applications*
●AC inverter drives
●UPS
●Electronic welders
Remarks
●Case temperature limited to
Tc= 125°C max, recomm.
Top= -40.. +150°C, product
rel. results valid for T= 150°
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :75A
Collector current Icp 1ms Tc=25°C :150A
Collector power dissipation Pc:380W
Isolation Voltage VIsol (AC 1 minute) :4000V
Operating junction temperature Tj:-40~+125°C
Storage temperature Tstg :-40 to +175°C
Mounting screw torque 2.5~5 N·m
Weight 160g
