Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

SKT340/18E Semikron 1800V 340A Phase Control Thyristor

  • SKT340/18E
  • SKT340/18E Discrete Power Device In-stock / Semikron: 1800V 340A capsule SCR. 90-day warranty, industrial rectifiers. Global fast shipping. Get quote.

    · Categories: Discrete Power Device
    · Manufacturer: Semikron
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 360
    90-Day Warranty
    Global Shipping
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on August 28, 2026

    Semikron SKT340/18E Phase Control Thyristor

    The Semikron SKT340/18E delivers dependable line-commutated power conversion, combining an 1800V repetitive peak off-state voltage with a 340A average on-state current in a hermetic capsule housing. Designed for severe industrial environments, it provides an outstanding 5200A surge withstand and a low junction-to-case thermal resistance of 0.07 K/W under double-sided cooling. For heavy-duty AC drives and line-level rectification where transient immunity is paramount, this disc thyristor prevents spurious gating through its verified 1000 V/µs critical dv/dt rating.

    Application Scenarios & Value

    High-Power Phase Control and Robust Line Rectification

    For 400V to 690V industrial rectifiers requiring robust surge withstand, this 1800V 340A capsule thyristor is the optimal choice. Engineers often face severe transient surges, thermal cycling stresses, and inductive kickbacks when controlling high-power inductive loads in industrial automation and heavy manufacturing. In high-capacity battery chargers, DC motor drives for machine tools, and soft starters, power semiconductors must endure substantial short-term overload during startup without experiencing thermal runaway.

    In a standard 500V DC motor drive system, the locked-rotor condition exposes switching devices to immense current spikes. The Semikron SKT340/18E resolves this engineering challenge with an allowable surge overload current (ITSM) of 5200A at a junction temperature of 125°C (and 5700A at 25°C), coupled with an I2t rating of 135,000 A2s. This substantial surge capacity permits standard semiconductor fuses to clear downstream short circuits before junction damage occurs.

    Operating a high-power conversion stage with a thermal resistance (Rth(j-c)) of 0.07 K/W under double-sided cooling is like opening dual wide-open exit lanes for heat dissipation rather than forcing thermal energy through a single congested roadway. This low thermal impedance allows systems running continuous currents of up to 700A RMS to maintain safe junction temperatures even in ambient operating environments reaching 45°C. For installations requiring alternative voltage classes or module configurations, the related SKT240/12E provides a lower 1200V rating in a compatible disc platform, whereas the SKKT430/18E offers an isolated dual-thyristor module package for alternative chassis layouts.

    Technical Deep Dive

    Ceramic Capsule Architecture and Dynamic dv/dt Resilience

    The internal design of the SKT340/18E utilizes a pressure-contact structure enclosed within a hermetically sealed metal-ceramic package conforming to JEDEC TO-200AB (Case B 8). Unlike soldered power modules that suffer from solder fatigue and void propagation under continuous thermal cycling, pressure contacts maintain uniform mechanical force across the entire 19mm silicon wafer area. This design relies on a recommended mounting clamp force of 4 kN to 5 kN to ensure optimal electrical contact and uniform thermal conductivity.

    To ensure swift and uniform turn-on across large silicon areas, Semikron integrates an amplifying gate structure. This mechanism functions like an internal electronic pilot relay: a modest gate trigger current (IGT = 150 mA) activates a small auxiliary region, which immediately steers load current to trigger the entire main cathode area simultaneously. This architecture elevates the critical rate of rise of on-state current ((di/dt)cr) to 125 A/µs, preventing localized hot spots during turn-on.

    What is the primary benefit of double-sided cooling in the SKT340/18E? It cuts junction thermal resistance down to 0.07 K/W. How does an 1800V rating protect 400V–690V industrial systems? It provides sufficient voltage headroom to absorb severe AC mains transients without breakdown. Furthermore, the critical rate of rise of off-state voltage ((dv/dt)cr) is rated at 1000 V/µs at maximum operating junction temperature (Tvj = 125°C), safeguarding against false firing caused by steep voltage transients in harsh electrical environments. Explore further background in power semiconductor reliability and consult Semikron Danfoss manufacturing resources.

    Key Parameter Overview

    Essential Ratings and Operating Characteristics

    Key Parameter Symbol & Conditions Rated Value Engineering Significance
    Repetitive Peak Voltage VDRM / VRRM (Tvj = -40...+125°C) 1800 V Ensures high blocking capability for 400V, 500V, and 690V industrial mains.
    Continuous Mean On-State Current ITAV (sin. 180; Tcase = 82°C, DSC) 340 A Provides continuous current handling for high-power rectification bridges.
    RMS On-State Current ITRMS (Double-Sided Cooling) 700 A Maximizes continuous conduction capability across heavy AC phase control stages.
    Maximum Surge Current ITSM (10 ms, Tvj = 125°C) 5200 A Withstands extreme inrush and fault currents without junction degradation.
    Surge Energy Absorption I2t (10 ms, Tvj = 125°C) 135,000 A2s Allows coordination with fast-acting semiconductor protection fuses.
    Critical Rate of Voltage Rise (dv/dt)cr (Tvj = 125°C) 1000 V/µs Prevents uncommanded gate turn-on during steep grid switching transients.
    Thermal Resistance (Junction-to-Case) Rth(j-c) (Continuous DC, Double-Sided) 0.07 K/W Enables efficient heat transfer into dual heatsinks for high power density.
    Required Mounting Force Fm 4.0 ... 5.0 kN Ensures low electrical contact resistance and prevents thermo-mechanical fatigue.

     

    Frequently Asked Questions

    Engineering Queries on Clamping, Thermal Design, and Gating

    Why is maintaining the 4 kN to 5 kN mounting force critical for the SKT340/18E?
    The internal semiconductor die is not soldered to external electrodes. Insufficient clamping force increases interface thermal resistance and electrical contact resistance, leading to localized overheating. Conversely, excessive force risks cracking the internal silicon wafer. Calibrated disc springs and torque indicators must be utilized during heatsink assembly.

    How does double-sided cooling impact heatsink selection for this thyristor?
    Double-sided cooling reduces the junction-to-case thermal resistance from 0.151 K/W (single-sided) down to 0.072 K/W (sinusoidal 180° conduction). This halving of thermal resistance allows engineers to downsize heatsink volume or run higher continuous current without exceeding the 125°C maximum junction limit. Review thermal sizing methods in thermal management guides.

    What gate drive parameters ensure reliable turn-on under high di/dt conditions?
    While the minimum DC gate trigger current (IGT) is 150 mA at 25°C, driving inductive loads with high initial current slopes requires a hard-firing gate pulse of 1 A to 2 A with a rise time under 1 µs. This rapidly saturates the amplifying gate structure and distributes conduction evenly across the die.

    Can the SKT340/18E be utilized in 690V AC line applications?
    Yes. With a repetitive peak reverse and off-state voltage (VRRM/VDRM) of 1800V and a non-repetitive peak rating (VRSM) of 1900V, the device provides more than a 2.5x safety margin above nominal peak AC voltages on 690V lines, accommodating grid fluctuations and switching surges.

    What is the maximum allowable case temperature when operating at full 340A average current?
    According to Semikron specifications, the 340A average rating applies at a case temperature (Tcase) of 82°C under double-sided cooling with sinusoidal 180° conduction. When Tcase reaches 100°C, the continuous rating must be derated to 230A to maintain the junction below 125°C.

    Strategic Deployment and Long-Term Reliability

    System Architecture Considerations for Heavy Industrial Power Conversion

    Integrating hockey-puck thyristors into modern grid-tied rectifiers, high-current electrolysis supplies, and heavy industrial soft-starters aligns with long-term infrastructure lifecycles exceeding 15 to 20 years. The robust physical package of the SKT340/18E eliminates bond-wire fatigue, providing structural reliability under repetitive power cycling. By standardizing on JEDEC TO-200AB dimensions and proven disc clamping topologies, system architects preserve field serviceability while maintaining exceptional surge and transient margins across fluctuating industrial grid environments.

    More Related Parts

    Semikron
    Semikron
    Semikron
    Semikron
    Semikron
    Semikron