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IXYS VMM650-01F New IGBT Module

#IXYS, #VMM650_01F, #IGBT_Module, #IGBT, VMM650-01F Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicon

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 135
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VMM650-01F Specification

Sell VMM650-01F, #IXYS #VMM650-01F New Stock, VMM650-01F Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; VMM650-01F, #IGBT_Module, #IGBT, #VMM650_01F
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vmm650-01f.html

Manufacturer Part Number: VMM650-01FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X9ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.73Case Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN THERMISTORDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 680 ADrain Current-Max (ID): 680 ADrain-source On Resistance-Max: 0.0018 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X9Number of Elements: 2Number of Terminals: 9Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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