#IXYS, #VMM650_01F, #IGBT_Module, #IGBT, VMM650-01F Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: VMM650-01FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X9ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.73Case Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN THERMISTORDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 680 ADrain Current-Max (ID): 680 ADrain-source On Resistance-Max: 0.0018 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X9Number of Elements: 2Number of Terminals: 9Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,