#IXYS, #VMM85_02F, #IGBT_Module, #IGBT, VMM85-02F Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduct
Manufacturer Part Number: VMM85-02FPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.75Case Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 200 VDrain Current-Max (Abs) (ID): 83 ADrain Current-Max (ID): 84 ADrain-source On Resistance-Max: 0.02 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 380 WPulsed Drain Current-Max (IDM): 335 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 84A I(D), 200V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,