#IXYS, #VMO400_02F, #IGBT_Module, #IGBT, VMO400-02F Power Field-Effect Transistor, 418A I(D), 200V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: VMO400-02FPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-CUFM-X4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.83Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 200 VDrain Current-Max (Abs) (ID): 418 ADrain Current-Max (ID): 418 ADrain-source On Resistance-Max: 0.0042 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-CUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 2450 WPower Dissipation-Max (Abs): 2450 WPulsed Drain Current-Max (IDM): 1672 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 418A I(D), 200V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET