Vishay VS-P102W IGBT Module

Manufacturer Part Number: VS-P102W

FEATURES • Glass passivated junction for greater reliability

• Electrically isolated base plate • Available up to 1200 VRRM/VDRM

• High dynamic characteristics • Wide choice of circuit configurations

• Simplified mechanical design and assembly

DESCRIPTION The VS-P102W series of integrated power circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified, providing advantages of cost reduction and reduced size. Applications include power supplies, control circuits, and battery chargers.

Maximum ratings and characteristics:

Absolute maximum ratings (Tc=25°C unless otherwise specified);

Collector-Emitter Voltage (Tvj = 25°C): VCES 1200 V

Continuous DC Collector Current (TC = 100°C, Tvj max = 175°C): IC nom 357 A

Repetitive Peak Collector Current (tP = 1 ms): ICRM 637 A

Total Power Dissipation (TC = 25°C, Tvj max = 175°C): Ptot 1600 W

Gate-Emitter Peak Voltage: VGES ±20V

Temperature under Switching Conditions (Tvj op -40~150°C)

RMS Isolation Voltage: VISO 2500V Mounting M5 Screw Torque: 4.0 N·m

Weight: 58g