#IXYS, #VUI9_06N7, #IGBT_Module, #IGBT, VUI9-06N7 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,; VUI9-06N7
Manufacturer Part Number: VUI9-06N7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-P9Manufacturer: IXYS CorporationRisk Rank: 5.73Additional Feature: FREE WHEELING DIODECase Connection: ISOLATEDCollector Current-Max (IC): 37 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-P9Number of Elements: 1Number of Terminals: 9Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,