Content last revised on February 5, 2026
Fuji Electric 2MBI450U4E-120: A 1200V 450A Dual IGBT Module Engineered for High-Frequency Efficiency
Product Overview and Key Specifications
Driving Performance in Demanding Power Conversion Systems
The Fuji Electric 2MBI450U4E-120 is a high-performance dual IGBT module designed to meet the rigorous demands of modern power conversion systems. At its core, this module offers a robust combination of 1200V blocking voltage and a 450A continuous collector current, housed in a standard, low-inductance package. Key benefits include optimized high-speed switching and minimized on-state voltage, which are critical for reducing overall power losses. This design directly addresses the engineering challenge of maximizing efficiency and power density in high-frequency applications such as motor drives and uninterruptible power supplies. For systems prioritizing minimal conduction and switching losses, the 2MBI450U4E-120 provides a well-balanced and reliable solution.
Application Scenarios & Value
Achieving System-Level Benefits in High-Power Inverters
The 2MBI450U4E-120 is engineered for applications where efficiency and reliability are paramount. Its primary value is demonstrated in high-power Variable Frequency Drives (VFDs) and servo drives, which are essential for industrial automation and motor control. In a VFD, the module's fast switching times (tr(i) typ. 100ns) and low turn-off switching loss (Eoff typ. 230mJ) enable higher PWM frequencies. This allows for smoother motor operation, reduced audible noise, and smaller magnetic components, contributing to a more compact and cost-effective system design. What is the impact of its low VCE(sat)? The low collector-emitter saturation voltage of 2.15V (typ) directly reduces conduction losses, a major source of heat, thereby easing Thermal Management requirements and improving overall system reliability.
Another key application is in large-scale Uninterruptible Power Supply (UPS) systems. Here, the module's robust Safe Operating Area (SOA) and short-circuit withstand time ensure system resilience during grid fluctuations and load faults. The dual, or half-bridge, configuration simplifies the inverter stage design. For applications demanding higher current capabilities within a similar voltage class, the related 2MBI600VE-120-50 offers an increased current rating.
Key Parameter Overview
Decoding the Specs for Optimal Switching Performance
The technical specifications of the 2MBI450U4E-120 are tailored for high-efficiency power switching. The following table provides a functionally grouped overview of its critical parameters, derived from the official datasheet.
| Parameter | Symbol | Condition | Value |
|---|---|---|---|
| Absolute Maximum Ratings (Tc=25°C) | |||
| Collector-Emitter Voltage | VCES | VGE=0V | 1200V |
| Gate-Emitter Voltage | VGES | - | ±20V |
| Continuous Collector Current | IC | Tc=80°C | 450A |
| Pulsed Collector Current | ICP | 1ms Pulse | 900A |
| Max. Power Dissipation | PC | 1 device | 2715W |
| Operating Junction Temperature | Tj | - | +150°C |
| Electrical Characteristics (Tj=25°C) | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=450A, VGE=15V | 2.15V (typ), 2.70V (max) |
| Gate Threshold Voltage | VGE(th) | IC=450mA, VCE=10V | 5.5V to 8.5V |
| Turn-on Switching Loss | Eon | VCC=600V, IC=450A | 280mJ (typ) |
| Turn-off Switching Loss | Eoff | 230mJ (typ) | |
| Thermal Resistance (Junction-to-Case) | Rth(j-c) | IGBT, per device | 0.046 K/W |
Download the 2MBI450U4E-120 datasheet for detailed specifications and performance curves.
Frequently Asked Questions (FAQ)
Engineering Insights into Module Performance
How does the low internal inductance of the 2MBI450U4E-120 benefit high-speed switching applications?
The module's low inductance design is crucial for minimizing voltage overshoot during the fast turn-off of the IGBT. Think of stray inductance like a small spring in the circuit; the faster you try to stop the current, the more it "bounces back" as a voltage spike. By minimizing this inductance, the 2MBI450U4E-120 reduces this spike, protecting the device from overvoltage stress, improving reliability, and often simplifying or reducing the need for external Snubber Circuit components.
What is the significance of the specified VGE(th) range of 5.5V to 8.5V?
The gate threshold voltage, VGE(th), is the minimum gate-emitter voltage required to start turning the IGBT on. The specified range provides designers with clear boundaries. The lower limit (5.5V) is important for ensuring high noise immunity; the gate drive circuit must keep noise levels well below this to prevent unintended turn-on. The upper limit (8.5V) guarantees that a standard 15V gate drive signal provides more than enough voltage to fully and efficiently saturate the IGBT, minimizing conduction losses. Understanding this range is fundamental to designing a robust and reliable gate drive circuit. For a deeper dive into this topic, explore these practical tips for robust IGBT gate drive design.
Industry Insights & Strategic Advantage
Meeting Energy Efficiency Mandates with Advanced Silicon
In an industrial landscape increasingly governed by stringent energy efficiency standards, such as those for electric motors, the performance of power electronics is under intense scrutiny. The 2MBI450U4E-120 directly addresses this trend. Its design focuses on minimizing total Switching Loss and conduction loss, which are the two primary culprits of inefficiency in an inverter. For a system designer, choosing a module like this is a strategic decision. It's not just about switching 450 amps; it's about doing so with the least amount of wasted energy. This translates into lower operating costs for the end-user, reduced CO2 emissions, and easier compliance with global efficiency regulations, providing a competitive advantage in the marketplace.
Intra-Series Comparison & Positioning
Balancing Performance for Mainstream High-Power Applications
Within the broader Fuji Electric IGBT module portfolio, the U4E-120 series is positioned to offer a compelling balance of switching speed, on-state voltage, and ruggedness. Compared to series that might prioritize ultra-low VCE(sat) at the expense of switching speed (ideal for lower-frequency applications), the 2MBI450U4E-120 is optimized for the "sweet spot" of mainstream industrial drives operating in the 5-20 kHz range. It offers a significant reduction in switching losses compared to older generation modules without the higher costs associated with the very latest, specialized high-frequency silicon. This makes it a workhorse solution, providing a cost-effective path to achieving high performance and reliability in a wide array of high-power inverter designs. For more information on preventing common issues, consider this guide on IGBT failure analysis.
Design & Integration Support
To facilitate the design-in process for the 2MBI450U4E-120, our technical team can provide access to key resources and support data. Please contact us to request information on application notes, thermal modeling, and gate drive recommendations to ensure optimal performance and reliability in your power system.
