FUJI 2MBI450VN-120-50 IGBT Module

Features

• High speed switching
• Voltage drive
• Low Inductance module structure

Applications

• Inverter for Motor Drive
• AC and DC Servo Drive Amplifier
• Uninterruptible Power Supply
• Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Collector-Emitter voltage (Vces): 1200V

Gate-Emitter voltage (Vges): ±20V

Continuous Collector current (Ic) at Tc=80°C: 450A

Collector current (Ic) Pulse 1ms at Tc=80°C: 900A

Collector power dissipation (Pc) per device: 2270W

Junction temperature (Tj): 175°C

Operating junction temperature (under switching conditions) (Tjop): 150°C

Case temperature (Tc): 125°C

Storage temperature (Tstg): -40 to +125°C

Isolation voltage:

Between terminal and copper base (*1): AC: 1min. 2500VAC

Between thermistor and others (*2): Not specified

Screw torque:

Mounting (*3): 3.5Nm