#Fuji, #1DI300MP_120, #IGBT_Module, #IGBT, 1DI300MP-120 Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin; 1DI300M
Manufacturer Part Number: 1DI300MP-120Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-PUFM-X5Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 1200 VConfiguration: DARLINGTON, 4 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 1500JESD-30 Code: R-PUFM-X5Number of Elements: 1Number of Terminals: 5Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin