2DI100D-050 Fuji Electric 500V 100A Dual Diode Module

2DI100D-050 Diode Module In-stock / Fuji Electric: 500V 100A high-speed switching. 90-day warranty, AC motor drives. Global fast shipping. Get quote.

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· Manufacturer: Fuji
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Content last revised on November 22, 2025

2DI100D-050 | Fuji 100A 600V Dual Darlington Transistor Module for Motor Drives & UPS

An Engineer's Overview of the 2DI100D-050

Integrated Architecture for Reliable Power Switching

The Fuji Electric 2DI100D-050 is a robust dual power transistor module designed for reliability in high-current power control systems. It provides a highly integrated solution by packaging two independent NPN Darlington transistors, each paired with a fast-acting free-wheeling diode. With core specifications of 600V | 100A | Dual NPN Darlington, this module offers significant engineering benefits, including simplified circuit layouts and enhanced protection for inductive loads. Its design is particularly well-suited for legacy system maintenance and new, cost-conscious designs where proven durability is a priority. For robust 240V AC motor drives requiring a simple H-bridge implementation, the 2DI100D-050's integrated dual-transistor design is a highly reliable choice.

Key Parameter Overview

Decoding the Specs for Industrial Drive Applications

The technical specifications of the 2DI100D-050 are tailored for industrial power applications. The parameters below highlight its capacity for handling significant power levels while ensuring stable operation. These ratings are foundational for designing reliable motor controls and power supplies.

Functional Group: Absolute Maximum Ratings (Tc=25°C)
Collector-Emitter Voltage (VCEO) 600V
Collector Current (IC) 100A
Total Power Dissipation (Pc) 620W
Operating Junction Temperature (Tj) +150°C
Functional Group: Electrical Characteristics (Tj=25°C)
DC Current Gain (hFE) 75 min (at IC=100A, VCE=2V)
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0V max (at IC=100A, IB=2A)
Diode Forward Voltage (VF) 2.5V max (at IF=100A)
Functional Group: Thermal Characteristics
Thermal Resistance, Junction to Case (Rth(j-c)) - Transistor 0.2 K/W
Thermal Resistance, Junction to Case (Rth(j-c)) - Diode 0.35 K/W

Download the 2DI100D-050 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Motor Control and Power Conversion

The true value of the 2DI100D-050 is realized in its application, where its integrated nature directly translates to design efficiency and robustness. It is an ideal component for building the power stage of AC and DC motor controllers, uninterruptible power supplies, and other high-power switching circuits operating on 200V-class lines.

Consider the engineering challenge of designing a compact and reliable inverter for a Variable Frequency Drive (VFD). Using discrete components would require two separate high-power Darlington transistors, two free-wheeling diodes, and the necessary isolation materials for mounting. The 2DI100D-050 consolidates these four components into a single, electrically isolated package. This not only reduces the physical footprint but also minimizes assembly steps and potential points of failure. The integrated free-wheeling diode is crucial for safely managing the kickback voltage from the inductive load of the motor, preventing damage to the transistor. By simplifying the bill of materials and the thermal assembly, this module accelerates development and enhances the manufacturing consistency of the final product.

While the 2DI100D-050 is optimized for 200/240V systems, applications demanding operation on higher voltage buses, such as 480V, would typically utilize modules like the 2MBI200NB-120, which offers a 1200V rating.

Technical Deep Dive

A Closer Look at the Dual Darlington Circuit and Its Practical Benefits

At the heart of the 2DI100D-050's performance is the Darlington transistor configuration. This design cascades two bipolar transistors to achieve a very high DC current gain (hFE). What is the primary benefit of its high current gain? It enables the module to switch a high collector current of 100A with a significantly smaller base current, allowing it to be controlled by lower-power driver circuitry.

Think of it as a power amplifier for your control signal. A small input current to the first transistor is amplified to control the much larger second transistor, allowing a microcontroller's logic signal to effectively switch a heavy 100-ampere load. It's like using a small, precise lever to move a very heavy object with minimal effort. The 2DI100D-050 contains two of these powerful circuits in one housing, making it a ready-to-use building block for an H-bridge topology. The isolated baseplate further enhances its design value by simplifying effective thermal management, as it can be mounted directly to a common heatsink without additional insulating layers.

Frequently Asked Questions

Engineering Inquiries on the 2DI100D-050

What is the main advantage of the dual transistor configuration in the 2DI100D-050 for an H-bridge design?
The primary advantage is component consolidation and simplified assembly. A single 2DI100D-050 module provides one full phase-leg (two transistors and two diodes), reducing the part count from four discrete components to one. This leads to a smaller PCB footprint, shorter assembly time, and improved reliability by minimizing interconnects.

How does the integrated free-wheeling diode in the 2DI100D-050 simplify the design for motor control applications?
The integrated FWD provides a built-in path for the current that is generated when switching an inductive load like a motor. Without it, high-voltage spikes would occur, potentially destroying the switching transistor. By including the diode within the module, designers are saved the task of selecting, sourcing, and placing a separate high-current diode, simplifying both the circuit layout and procurement.

Is the 2DI100D-050 an IGBT? If not, what applications is this BJT module best suited for?
No, the 2DI100D-050 is a Bipolar Junction Transistor (BJT) based Darlington module, not an IGBT. While IGBTs are favored in new, high-frequency designs, BJT modules like this remain highly relevant for lower-frequency (< 5 kHz) applications where ruggedness and cost-effectiveness are key. They are excellent choices for DC choppers, industrial motor drives, and as reliable service parts for a vast installed base of equipment. Understanding the fundamental differences between BJT, MOSFET, and IGBT devices is key to selecting the right component.

System Design & Integration

Leveraging the 2DI100D-050 for Robust Power Stages

For design engineers and system architects, the 2DI100D-050 from Fuji Electric represents a practical approach to building durable power electronics. Its dual-channel architecture makes it a versatile component for a variety of topologies. To ensure optimal performance and long-term reliability, a proper base drive circuit is essential to provide adequate current to achieve saturation (low VCE(sat)) and rapid turn-off. We encourage a thorough review of the datasheet to align its dynamic characteristics with your specific application requirements and to develop a thermal solution that keeps the junction temperature well within its safe operating area.

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