Fuji Electric 6RI100P-160-51 | High-Voltage 6-Pack IGBT for Robust Industrial Power Conversion
The Fuji Electric 6RI100P-160-51 is a cornerstone IGBT module engineered for high-reliability, three-phase power conversion systems. With its robust 1600V blocking voltage and 100A current rating, this module provides the durability and performance headroom required for demanding industrial applications operating on 400/480V AC lines. Its integrated 6-pack configuration simplifies inverter design, reducing component count and assembly complexity.
- High Voltage Rating: 1600V VCES provides a substantial safety margin against voltage spikes and transients common in industrial environments.
- Integrated 6-Pack Design: Combines six IGBTs and six free-wheeling diodes (FWDs) in a single module, creating a complete three-phase inverter bridge.
- Proven Reliability: Built on Fuji Electric's established P-Series technology, known for its ruggedness and dependable performance in the field.
- Optimized for Low-to-Medium Frequencies: Engineered for exceptional performance in applications like motor drives and power supplies where durability is prioritized over ultra-high switching speeds.
Application Scenarios & Engineering Value
The 6RI100P-160-51 excels where reliability under challenging electrical conditions is non-negotiable. Its design directly addresses the pain points of several key industrial sectors:
- Industrial Motor Drives: In Variable Frequency Drives (VFDs), the 1600V rating ensures the module can withstand the inductive voltage overshoots that occur during motor deceleration or fault conditions. This inherent toughness reduces the need for oversized snubber circuits and enhances overall drive longevity.
- Welding Power Supplies: The module's ability to handle high current pulses and its robust thermal design make it an excellent choice for the output stage of industrial welders, ensuring consistent power delivery under heavy load cycles.
- Uninterruptible Power Supplies (UPS): For commercial and industrial UPS systems, the 6RI100P-160-51 provides a dependable inverter stage. Its integrated nature simplifies the power train, contributing to a more compact and reliable system architecture.
Key Technical Specifications
The following parameters define the core operational capabilities of the 6RI100P-160-51. For a complete set of characteristics and performance curves, please refer to the official datasheet. Download the 6RI100P-160-51 datasheet here.
Parameter | Value |
---|---|
Collector-Emitter Voltage (VCES) | 1600V |
Continuous Collector Current (IC) @ TC=80°C | 100A |
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=100A | 2.7V (Typ.) |
Total Power Dissipation (PC) per IGBT | 520W |
Operating Junction Temperature (Tj) | -40°C to +150°C |
Isolation Voltage (Visol) | 2500V (AC, 1 minute) |
Technical Deep Dive: The Balance of Ruggedness and Efficiency
While modern IGBTs often emphasize ultra-low VCE(sat) values, the Fuji 6RI100P-160-51 is a product of an engineering philosophy that prioritizes robustness. Its planar gate structure, characteristic of its technology generation, results in a slightly higher on-state voltage drop compared to newer trench-gate designs. However, this is a deliberate trade-off. This design provides a wider, more forgiving Safe Operating Area (SOA), particularly under short-circuit conditions. This makes the module exceptionally resilient to fault events, a critical attribute for systems where downtime is costly. For more information on preventing common issues, explore our guide to IGBT failure analysis.
Frequently Asked Questions (FAQ)
1. Is the 6RI100P-160-51 suitable for high-frequency applications like solar inverters?
While it can be used in lower-frequency power systems, this module is not optimized for high switching frequencies (typically >15-20 kHz). Its switching losses (Eon/Eoff) are higher than those of modern, high-speed IGBTs. It is best suited for applications operating in the 2-10 kHz range, such as standard motor drives, where conduction losses and ruggedness are the primary concerns.
2. What are the primary thermal management considerations for this module?
Effective thermal management is key to leveraging the full capability of the 6RI100P-160-51. The baseplate must be mounted to a flat, clean heatsink with an appropriate thermal interface material (TIM). Given its 520W power dissipation per transistor, the thermal resistance of the heatsink must be calculated to keep the junction temperature (Tj) well below the 150°C maximum under worst-case load conditions. Understanding the fundamentals of thermal resistance (Rth) is crucial for reliable system design.
For application-specific design support or to discuss volume pricing for the Fuji 6RI100P-160-51, please contact our technical team.