Content last revised on February 9, 2026
The 2MBI100SC-120: A Deep Dive into a Fuji Electric Dual IGBT Module
Introduction: Core Specifications and Engineering Value
Engineered for High-Reliability Power Conversion Systems
The Fuji Electric 2MBI100SC-120 is a dual IGBT module designed to deliver a robust balance of efficiency, thermal stability, and ruggedness for demanding power conversion applications. With core specifications of 1200V and 100A, this N-channel IGBT module provides a foundational building block for systems where performance under load is critical. Its key engineering benefits include optimized switching characteristics for reduced energy loss and a design focused on long-term operational reliability. This module is engineered to address the implicit challenge of maintaining high efficiency across the variable load cycles characteristic of modern industrial drives. For mid-range industrial drives requiring a proven balance of performance and thermal headroom, this 1200V module stands out as an optimal choice.
Application Scenarios & Value
Achieving System-Level Benefits in Industrial Motor Drives
The 2MBI100SC-120 is expertly positioned for deployment in high-performance power control systems. Its primary application is in Variable Frequency Drives (VFDs) and AC servo systems, where precise control and high efficiency are paramount. In a typical VFD application controlling an industrial conveyor or pump, the module's low collector-emitter saturation voltage (VCE(sat)) of 2.2V (typical) directly translates to lower conduction losses. This is particularly crucial during sustained, high-torque operation, as it reduces the thermal load on the heatsink, enabling more compact system designs or providing greater thermal margin in harsh environments. The module's robust Safe Operating Area and a short-circuit withstand time of 10µs provide essential protection against fault conditions common in motor applications, such as locked rotors or sudden load changes, thus enhancing overall system reliability.
What is the primary benefit of its low VCE(sat)? Reduced power dissipation, leading to higher system efficiency and simplified thermal management. The integration of two IGBTs in a half-bridge configuration also simplifies the design of three-phase inverter stages. While the 2MBI100SC-120 is a strong fit for 100A applications, systems requiring higher current handling for larger motors could consider the related 2MBI150SC-120, which offers a 150A rating within a similar voltage class.
Key Parameter Overview
Decoding the Specs for Efficient and Reliable Operation
The technical specifications of the 2MBI100SC-120 underscore its suitability for industrial power conversion. The parameters are carefully balanced to provide designers with a component that is both efficient and durable. Below is a summary of its key electrical and thermal characteristics, grouped by function to aid in system design and analysis.
| Characteristic | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25°C unless otherwise specified) | ||||
| Collector-Emitter Voltage | VCES | - | 1200 | V |
| Gate-Emitter Voltage | VGES | - | ±20 | V |
| Continuous Collector Current | IC | Tc=80°C | 100 | A |
| 1ms Collector Current | ICP | - | 200 | A |
| Max Power Dissipation | PC | 1 device | 480 | W |
| Operating Junction Temperature | Tj | - | +150 | °C |
| Electrical Characteristics (Tj=25°C unless otherwise specified) | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100A, VGE=15V | 2.2 (Typ) / 2.7 (Max) | V |
| Gate-Emitter Leakage Current | IGES | VGE=±20V, VCE=0V | ±500 | nA |
| Collector-Emitter Cut-Off Current | ICES | VCE=1200V, VGE=0V | 1.0 | mA |
| Turn-On Time | ton | Inductive Load | 400 | ns |
| Turn-Off Time | toff | 500 | ns | |
| Forward Voltage Drop (FWD) | VF | 1.9 (Typ) / 2.5 (Max) | V | |
| Thermal Characteristics | ||||
| Thermal Resistance (IGBT) | Rth(j-c) | Junction to Case | 0.26 | °C/W |
| Thermal Resistance (FWD) | Rth(j-c) | Junction to Case | 0.48 | °C/W |
Download the 2MBI100SC-120 datasheet for detailed specifications and performance curves.
Technical Deep Dive
Understanding the Importance of Short-Circuit Ruggedness
A standout feature specified for the "SC" series is its short-circuit withstand time (tsc), rated at 10µs. This parameter is not merely a number on a datasheet; it's a critical measure of the module's toughness. Think of it as the device's built-in grace period during a catastrophic failure event. In applications like Servo Drives, a motor stall or a phase-to-phase short can cause current to spike dramatically. The 2MBI100SC-120 is engineered to survive this immense stress for 10 microseconds, giving the system's protection circuitry—such as the gate driver's desaturation detection—enough time to safely shut the IGBT down. What does this short-circuit rating mean for a design engineer? It means enhanced system survivability, reducing the likelihood of catastrophic module failure and improving the overall reliability of the end equipment.
Frequently Asked Questions (FAQ)
What is the primary advantage of the 2MBI100SC-120's dual-IGBT (half-bridge) configuration?
The half-bridge topology significantly simplifies the design and layout of three-phase inverters. It integrates two series-connected IGBTs with anti-parallel diodes into a single, thermally efficient package. This reduces component count, minimizes stray inductance between switches, and streamlines the assembly process for applications like motor drives and high-power inverters.
How does the VCE(sat) of 2.2V (typ) impact thermal design for a VFD?
A lower VCE(sat) directly reduces conduction power loss (P_loss = VCE(sat) * I_C). In a VFD, where the module conducts significant current, this reduction in wasted heat is critical. It allows engineers to either use a smaller, more cost-effective heatsink for the same operating temperature or run the device at a lower junction temperature with a standard heatsink, thereby increasing the module's lifespan and reliability. For more information on thermal performance, consult resources on Thermal Resistance.
What considerations are important for the gate drive circuit for this module?
To achieve the specified switching performance and ensure reliability, the gate drive circuit should provide clean, sharp pulses with a recommended voltage of +15V for turn-on and a negative voltage (e.g., -5V to -15V) for a firm turn-off. A negative gate voltage is crucial for preventing parasitic turn-on caused by Miller currents, especially in a half-bridge configuration. Additionally, the driver must have sufficient peak current capability to charge and discharge the IGBT's input capacitance quickly, minimizing switching losses.