2MBI200U4B-120-50 Fuji Electric 1200V 200A IGBT Module

Content last revised on January 20, 2026

Fuji 2MBI200U4B-120-50: 1200V/200A Low-Loss IGBT Module

Engineered for Peak Conversion Efficiency

The Fuji Electric 2MBI200U4B-120-50 IGBT Module is a 2-in-1 (half-bridge) device from the U-Series, engineered to deliver exceptional efficiency in demanding power conversion systems. It provides a strategic balance between conduction and switching losses, enabling higher performance and reliability. With key specifications of 1200V, 200A, and a typical VCE(sat) of 1.70V, this module facilitates reduced thermal load and improved system efficiency. Its low VCE(sat) directly translates to lower conduction losses, significantly easing thermal management challenges in high-current inverter and drive applications.

Powering High-Efficiency Systems: Core Applications

The design philosophy of the 2MBI200U4B-120-50 centers on minimizing total power loss, making it a pivotal component in applications where energy efficiency is a primary design driver. Its performance characteristics provide tangible engineering benefits across several key industrial sectors.

• Variable Frequency Drives (VFDs): In motor control, lower module losses mean less heat dissipated within the control cabinet. This allows for more compact cabinet designs or higher power ratings in existing footprints, contributing to reduced system costs and enhanced operational reliability.
• Solar Inverters: For renewable energy systems, every fraction of a percent in efficiency counts. The module's low loss profile helps maximize the energy harvested from photovoltaic arrays by reducing power dissipation during the DC-to-AC conversion process.
• Uninterruptible Power Supplies (UPS): In critical backup power systems, high efficiency leads to lower standby power consumption and reduced cooling requirements. This translates directly to a lower Total Cost of Ownership (TCO) and can extend battery runtime during an outage.

For mid-power (50-100kW) inverters where minimizing total losses is paramount, its balanced VCE(sat) and E_sw profile makes it a superior selection.

Meeting Modern Efficiency Mandates with U-Series Technology

As global energy efficiency standards become more stringent, the demand for high-performance power semiconductors intensifies. Components are no longer selected on power handling alone; their impact on overall system efficiency is a critical evaluation criterion. The Fuji Electric 2MBI200U4B-120-50, leveraging Fuji Electric's advanced U-Series chip technology, directly addresses this industry trend. This technology is optimized to reduce the trade-off between conduction losses (VCEsat) and switching losses, a fundamental challenge in IGBT design. By delivering superior performance in both domains, this module enables designers to create systems that not only meet but exceed current and future regulatory requirements for energy consumption, giving their products a distinct competitive edge in an eco-conscious market.

Dissecting the Loss-Reduction Architecture

The performance of the 2MBI200U4B-120-50 is rooted in its fundamental semiconductor characteristics, which are carefully optimized to minimize power dissipation. Understanding these parameters is key to leveraging the module's full potential.

Low Conduction Loss Profile

A primary contributor to the module's efficiency is its low collector-emitter saturation voltage (VCE(sat)). What is the core benefit of its low VCE(sat)? Reduced conduction losses and lower heat generation. Think of VCE(sat) as the 'toll' the current pays to pass through the switch when it's fully on. The 2MBI200U4B-120-50 features a typical VCE(sat) of just 1.70V at its nominal current of 200A. This low 'toll' means less energy is converted into waste heat, a crucial factor in the thermal design of the entire power stage. For further reading, our guide on decoding IGBT datasheets offers more context.

Optimized Switching Dynamics

In addition to static losses, dynamic losses during turn-on (Eon) and turn-off (Eoff) are significant, especially in higher-frequency applications. The U-Series technology within this module is engineered to provide fast and clean switching transitions. This minimizes the time the device spends in the high-dissipation linear region, effectively lowering the total switching energy loss per cycle and further contributing to superior overall efficiency.

Deployment Example: Enhancing Mid-Power VFD Efficiency

A design team was tasked with upgrading a 75kW Variable Frequency Drive to meet new, stricter efficiency targets without increasing its physical size. Their original design was thermally constrained. By replacing the existing IGBTs with the Fuji 2MBI200U4B-120-50, the team capitalized on its lower total power losses. The result was a measurable 1.2°C/kW reduction in thermal system resistance needed, which allowed them to maintain the existing heatsink design while achieving higher output power. This component-level decision enabled a system-level victory, meeting new efficiency regulations and avoiding a costly mechanical redesign.

Data for Decision-Making: 2MBI200U4B-120-50 Parameter Focus

To assist in your component evaluation process, it is useful to see how a device's parameters align with different application priorities. While the 2MBI200U4B-120-50 is optimized for low-loss performance at 200A, other applications may prioritize higher current density. For systems that require greater current handling in a similar package, the 2MBI300HH-120 presents an alternative. The table below offers a factual comparison to support your analysis.

Key Specifications at a Glance

The following table highlights the essential performance metrics of the 2MBI200U4B-120-50, based on the official datasheet. For complete details, please download the datasheet.

Frequently Asked Questions

Answering common engineering questions about the 2MBI200U4B-120-50.

• What makes the U-Series, like the 2MBI200U4B-120-50, particularly efficient?The U-Series employs Fuji's 4th generation trench-gate and thin-wafer technology. This design simultaneously reduces VCE(sat) to cut down on conduction losses and optimizes the carrier profile to lower switching energy (Eon/Eoff), achieving a superior low-loss balance.
• How does the low VCE(sat) of this module impact thermal design?A lower VCE(sat) directly reduces the power dissipated as heat during conduction (P_cond = VCE(sat) * Ic). This reduction in waste heat means a smaller, lighter, or lower-cost heatsink can be used, or alternatively, provides greater thermal margin for improved system reliability and lifetime.
• What is the significance of the "U4B" designation in the part number?The "U4" signifies that the module incorporates Fuji Electric's 4th Generation U-Series IGBT chip technology. The subsequent letter, "B," typically denotes a specific variant within that generation, often related to optimizations in the trade-off between switching speed and saturation voltage for particular application profiles.

Strategic Outlook for System Design

Integrating a component like the 2MBI20U4B-120-50 is more than a simple substitution; it's a strategic design choice that aligns a product with the long-term trends of electrification and energy conservation. As efficiency becomes a primary market differentiator, building a foundation on low-loss components ensures a product's viability and competitiveness. Choosing this module equips power systems not just for today's requirements, but for the higher performance and lower environmental impact standards of tomorrow.