#Fuji, #6MBI25F_120, #IGBT_Module, #IGBT, 6MBI25F-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN; 6MBI25F-120
Manufacturer Part Number: 6MBI25F-120Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 19Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Additional Feature: LOW SATURATION VOLTAGECollector Current-Max (IC): 25 ACollector-Emitter Voltage-Max: 1200 VJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1500 nsTurn-on Time-Nom (ton): 800 ns Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN