6MBI50S-120-02 Fuji Electric 1200V 50A 6-Pack IGBT Module

6MBI50S-120-02 IGBT Module In-stock / Fuji Electric: 1200V 50A S-Series module. 90-day warranty, AC drives & UPS. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: FUJI
· Price: US$
· Date Code: 2024+
. Available Qty: 230
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Content last revised on November 20, 2025

6MBI50S-120-02 | Fuji 1200V 50A IGBT Module | Datasheet & Specs

An Engineering Overview of the 6MBI50S-120-02 Six-Pack IGBT Module

The Fuji Electric 6MBI50S-120-02, part of the S-Series of IGBT Modules, is a 1200V, 50A six-pack module designed for efficient and reliable three-phase power conversion. This component integrates a full inverter bridge into a single compact package, engineered to minimize conduction losses and simplify system design. With its low collector-emitter saturation voltage (VCE(sat)) and robust operational characteristics, it provides a solid foundation for building high-performance power stages. What is the main advantage of the 6MBI50S-120-02's low VCE(sat)? It directly reduces power loss during operation, increasing efficiency. Best suited for 3-phase motor drives up to 7.5kW, this module's low conduction losses are key for creating compact, energy-efficient designs.

  • Core Specifications: 1200V | 50A | VCE(sat) 2.3V (typ)
  • Key Benefit 1: Lower conduction losses enhance overall system efficiency.
  • Key Benefit 2: Integrated six-pack design simplifies PCB layout and assembly.

Key Parameter Overview

Decoding the Electrical Characteristics for Efficient Power Switching

The technical specifications of the 6MBI50S-120-02 are pivotal for system design, particularly in applications where thermal performance and efficiency are critical. The parameters below, sourced from the official datasheet, provide the foundation for accurate modeling and reliable implementation.

Absolute Maximum Ratings (Tc=25°C)

Parameter Symbol Rating Unit
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES ±20 V
Continuous Collector Current (Tc=80°C) IC 50 A
Pulsed Collector Current (1ms) IC pulse 100 A
Max. Power Dissipation (1 device) PC 360 W
Operating Junction Temperature Tj +150 °C
Isolation Voltage (AC, 1 min.) Vis 2500 V
Electrical Characteristics (Tj=25°C)

Parameter Symbol Typical Value Max Value Unit Conditions
Collector-Emitter Saturation Voltage VCE(sat) 2.3 2.8 V IC=50A, VGE=15V
Gate-Emitter Threshold Voltage VGE(th) 7.2 8.5 V VCE=20V, IC=50mA
Turn-on Time ton 0.35 1.2 µs VCC=600V, IC=50A, VGE=±15V, RG=24Ω
Turn-off Time toff 0.45 1.0 µs
Diode Forward Voltage VF 2.5 3.3 V IF=50A, VGE=0V

Download the 6MBI50S-120-02 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in AC Motor Drives and General-Purpose Inverters

The 6MBI50S-120-02 is engineered for power conversion systems where efficiency and reliability are paramount. Its primary application is in Variable Frequency Drives (VFDs) for AC motor control, AC/DC servo drive amplifiers, and uninterruptible power supplies (UPS).

Consider the design of a VFD for a 5.5 kW (7.5 HP) industrial motor. The key engineering challenge is managing heat generated by the power stage to ensure long-term reliability and minimize enclosure size. The 6MBI50S-120-02's low VCE(sat) of 2.3V directly addresses this. A lower on-state voltage drop means less power is dissipated as heat during conduction. This reduction in thermal load allows for the use of a smaller, more cost-effective heatsink, directly impacting the bill of materials (BOM) and the final product's physical footprint. The integrated six-pack configuration further reduces manufacturing complexity by consolidating twelve power components (six IGBTs and six FWDs) into a single module, streamlining assembly and improving power density. For applications requiring higher current, the related 6MBI100S-120-02 offers a 100A rating within a similar package.

Technical Deep Dive

Analyzing the Impact of Low VCE(sat) and Square RBSOA on System Reliability

Two often-understated parameters in the datasheet carry significant weight for system reliability: the collector-emitter saturation voltage (VCE(sat)) and the Reverse Bias Safe Operating Area (RBSOA). The low VCE(sat) is not just an efficiency metric; it's a critical factor in thermal management. Think of it like a water valve: a lower VCE(sat) is like a wider, less restrictive valve, allowing current (water) to flow with less pressure drop (voltage drop). This "smoother" flow generates less friction (heat), easing the burden on the entire thermal system and contributing to a longer operational life.

Furthermore, the datasheet specifies a Square RBSOA. The RBSOA defines the voltage and current limits the IGBT can safely withstand during turn-off. A "square" or wide RBSOA is particularly crucial in motor drive applications, which involve highly inductive loads. During turn-off, the collapsing magnetic field in the motor windings can induce significant voltage spikes. A robust, square RBSOA ensures the module can absorb this energy without failure, providing a critical margin of safety and enhancing the drive's resilience against transient electrical stress. What is a key reliability feature of this module? Its Square RBSOA ensures robust performance during inductive load switching.

Frequently Asked Questions (FAQ)

Engineering Questions on the 6MBI50S-120-02

How does the VCE(sat) of 2.3V impact heatsink selection for a motor drive application?
A lower VCE(sat) directly reduces conduction losses (P_loss = VCE(sat) * Ic). With less heat to dissipate, engineers can specify a smaller, lighter, and lower-cost heatsink while maintaining the same maximum junction temperature (Tj), or achieve a lower operating temperature with the same heatsink for improved system longevity. This is a crucial aspect of unlocking IGBT thermal performance.

What is the primary benefit of the module's integrated 'six-pack' configuration?
The primary benefit is design simplification. It integrates the entire three-phase inverter bridge into one component, drastically reducing the number of individual parts, minimizing PCB complexity, lowering assembly time, and reducing parasitic inductance between switches compared to a design using discrete IGBTs.

For further evaluation of your power stage requirements, our team can provide additional data and support for the 6MBI50S-120-02 IGBT module.

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