Content last revised on December 11, 2025
Harnessing 1200V Power with the Fuji Electric 6MBI50L-120 IGBT Module
An Integrated Solution for Robust Power Conversion
The 6MBI50L-120 is an IGBT Module from Fuji Electric, engineered as a complete three-phase inverter bridge (6-pack) within a single, robust housing. It delivers a core specification of 1200V collector-emitter voltage and a 50A continuous collector current, establishing it as a capable solution for demanding power control systems. Key engineering benefits include a significantly simplified design cycle and a predictable thermal management path. This module is the definitive choice for cost-effective Variable Frequency Drives (VFDs) up to 22 kW where design simplicity and proven reliability are paramount.
Application Scenarios & Value
Achieving System-Level Benefits in Industrial Motor Control
This module is ideally suited for low-to-mid-power industrial automation. For a system designer developing a Variable Frequency Drive (VFD) for a conveyor belt application, the 6MBI50L-120 offers a direct path to a compact and reliable power stage. The integrated 6-pack topology, containing six IGBTs and six free-wheeling diodes, consolidates the entire three-phase inverter into one component. This approach eliminates the complex process of selecting, matching, and laying out twelve separate discrete components, reducing PCB complexity and potential points of failure. The module's 1200V rating provides a substantial safety margin for operation on 380V to 480V AC lines, ensuring resilience against voltage transients common in industrial environments. What is the primary benefit of this design? A faster time-to-market and enhanced manufacturing consistency for the final drive product. For systems requiring higher current handling for more powerful motors, the related 6MBI100S-120 offers a similar voltage class with double the current capacity.
Key Parameter Overview
Decoding the Specs for Simplified System Design
The performance of the 6MBI50L-120 is defined by its electrical and thermal characteristics, which are crucial for reliable system design. The parameters below are organized to provide a clear view of the module's capabilities for both the inverter and diode sections. Understanding these values is the first step in effective IGBT thermal management and performance optimization.
| Functional Group | Parameter | Value |
| IGBT Inverter Section | Collector-Emitter Voltage (Vces) | 1200V |
| Continuous Collector Current (Ic) at Tc=80°C | 50A | |
| Collector-Emitter Saturation Voltage (VCE(sat)) Typ. | 2.7V | |
| FWD Diode Section | Forward Voltage (Vf) Typ. | 2.2V |
| Repetitive Peak Reverse Voltage (VRRM) | 1200V | |
| Thermal & Mechanical | Total Power Dissipation (Pc) | 400W |
| Operating Junction Temperature (Tj) | +150°C |
Download the 6MBI50L-120 datasheet for detailed specifications and performance curves.
Technical Deep Dive
Analyzing the Foundation of Thermal Reliability
A key aspect of the 6MBI50L-120's design is its standard industrial package, which forms the foundation of its thermal performance. The module's reliability is directly tied to its ability to transfer heat from the internal silicon chips to an external heatsink. This is quantified by the thermal resistance, Rth(j-c). For this module, the thermal resistance from junction-to-case for the IGBT is specified at 0.31°C/W per chip. Think of this value as the "traffic congestion" for heat energy; a lower number signifies a wider, clearer highway for heat to escape. This parameter is not just a number; it is a critical input for heatsink selection and overall system thermal design, directly influencing the final product's operational lifespan and power density.
Frequently Asked Questions (FAQ)
What is the primary advantage of the 6-pack configuration in the 6MBI50L-120?
The main advantage is design simplification. By integrating the full three-phase inverter bridge into one module, it reduces component count, minimizes PCB layout complexity, and streamlines the manufacturing process compared to using discrete IGBTs and diodes.
How does the Collector-Emitter Saturation Voltage (VCE(sat)) of 2.7V impact system efficiency?
The VCE(sat) is the voltage drop across the IGBT when it is fully on. This voltage, multiplied by the current flowing through it, determines the conduction losses. What is the impact on efficiency? A VCE(sat) of 2.7V is characteristic of this voltage class and technology generation, and it must be factored into thermal calculations to ensure the junction temperature remains within safe limits during operation. For a deeper understanding, consulting resources that help in decoding IGBT datasheets is highly recommended.
To evaluate the 6MBI50L-120 for your specific application, or to explore its integration into your power system design, please contact our technical sales team for further information and support.
