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FUJI 7MBR15NF120

  • 7MBR15NF120

7MBR15NF120 FUJI Insulated Gate Bipolar Transistor, 15A 1200V PIM, N-Channel

· Categories: IGBT
· Manufacturer: FUJI
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 500
90-Day Warranty
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Content last revised on December 18, 2024

Features

High speed switching
Voltage drive
Low inductance module structure
Converter diode bridge dynamic brake circuit

Applications

inverter for motor drive
AC and DC servo drive ampilifier
Uninterrupitble Power supply

Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :15A
Collector current Icp 1ms Tc=25°C :30A
Collector current Ic Continuous Tc=80°C :10A
Collector current Icp 1ms Tc=80°C :20A
Collector power dissipation Pc:120W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 1.3~1.7 N·m

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