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FUJI 7MBR50SB140-01 IGBT Module

7MBR50SB140-01

7MBR50SB140-01 Insulated Gate Bipolar Transistor, 75A I(C), 1400V V(BR)CES, N-Channel

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 2024+
. Available Qty: 717
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7MBR50SB140-01 Specification

Manufacturer Part Number: 7MBR50SB140-01
Part Life Cycle Code: Obsolete
Ihs Manufacturer: COLLMER SEMICONDUCTOR INC
Package Description: FLANGE MOUNT, R-XUFM-X24
Manufacturer: Fuji
Risk Rank: 5.84
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 1400 V
Configuration: COMPLEX
JESD-30 Code: R-XUFM-X24
Number of Elements: 7
Number of Terminals: 24
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 530 ns
Turn-on Time-Nom (ton): 600 ns

Absolute maximum ratings (Tc=25°C unless without specified)

  • Collector-Emitter voltage (Vces): 1400V
  • Gate-Emitter voltage (VGES): ±20V
  • Collector current (Ic Continuous Tc=25°C): 75A
  • Collector current (Icp 1ms Tc=25°C): 150A
  • Collector power dissipation (Pc): 360W
  • Isolation Voltage (VIsol, AC 1 minute): 2500V
  • Operating junction temperature (Tj): +150°C
  • Storage temperature (Tstg): -40 to +125°C
  • Mounting screw torque: 3.5 N·m
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