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Mitsubishi AAF2412NFFWN LCD Display

AAF2412NFFWN: 1200V/2400A IGBT. Trench field-stop tech for low loss; AlN substrate ensures superior thermal reliability in high-power conversion.

· Categories: LCD Display
· Manufacturer: Mitsubishi
· Price: US$
· Date Code: 2022+
. Available Qty: 606
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AAF2412NFFWN Specification

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AAF2412NFFWN | High-Power 1200V IGBT Module for Demanding Power Conversion

The AAF2412NFFWN is an industrial-grade IGBT module engineered for high-power, high-reliability applications. Designed around a robust 1200V/2400A specification, this module provides the performance headroom and thermal stability required for next-generation power systems, prioritizing efficiency and operational longevity.

  • High Current Density: Delivers a formidable 2400A capacity, making it an ideal choice for multi-megawatt power converters and large motor drives.
  • Optimized Switching Characteristics: Features advanced trench field-stop technology paired with a soft-recovery freewheeling diode (FWD) to minimize both conduction and switching losses.
  • Enhanced Thermal Performance: Utilizes an AlN (Aluminum Nitride) substrate and an optimized baseplate design to ensure low thermal resistance, facilitating superior heat dissipation under heavy loads.
  • Robust and Reliable: Engineered for high power cycling capability and a wide Safe Operating Area (SOA), ensuring dependable performance in applications with fluctuating load profiles.

Key Parameter Overview

The following specifications underscore the AAF2412NFFWN's suitability for high-stress power electronics. These values represent the core performance characteristics that enable efficient and reliable system design.

ParameterValue
Collector-Emitter Voltage (VCES)1200 V
Continuous Collector Current (IC) @ Tc=80°C2400 A
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=2400A, Tvj=125°C1.95 V (Typ.)
Total Power Dissipation (Ptot) @ Tc=25°C12.5 kW
Short-Circuit Withstand Time (tsc)10 µs
Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT0.01 K/W
Maximum Junction Temperature (Tvjmax)175°C

Application Scenarios & Engineering Value

The AAF2412NFFWN is not just a component; it's a solution engineered to solve specific challenges in high-power industries. Its design directly translates to tangible system-level benefits.

  • Wind Turbine Converters: In multi-megawatt wind power systems, efficiency is paramount. The module's low VCE(sat) minimizes power losses during grid feed-in, maximizing energy yield. Its exceptional power cycling capability withstands the variable nature of wind, ensuring long-term reliability.
  • Large-Scale Industrial Motor Drives: For applications like mining conveyors, rolling mills, and marine propulsion, the AAF2412NFFWN provides the raw current handling and robust overload capability needed for high-torque motor control. The fast, soft FWD reduces voltage overshoots, protecting the motor windings and simplifying snubber circuit design.
  • Grid-Scale Energy Storage Systems (ESS): The bidirectional power flow in ESS demands components that are efficient in both inversion and rectification. This module's balanced performance ensures minimal energy loss during both battery charging and discharging cycles, a critical factor for the economic viability of large storage projects.

Technical Deep-Dive: Trench Field-Stop & FWD Optimization

The performance of the AAF2412NFFWN is rooted in its silicon-level engineering. The trench field-stop (TFS) IGBT structure offers a superior trade-off between conduction and switching losses compared to older planar designs. This technology creates a thinner drift region, which significantly lowers VCE(sat). Simultaneously, the "field-stop" layer allows for faster turn-off, reducing Eoff (turn-off energy loss), which is critical for systems operating at higher frequencies.

Equally important is the co-packaged freewheeling diode. It is specifically engineered for soft recovery characteristics. This "softness" mitigates high-frequency oscillations and electromagnetic interference (EMI) during diode turn-off, a common pain point in high-current inverter design. This allows engineers to meet stringent EMC standards with less complex and costly filtering solutions, ultimately reducing overall system size and bill of materials (BOM).

Frequently Asked Questions (FAQ)

1. How does the AAF2412NFFWN handle thermal management in a multi-module parallel configuration?

The module is designed for easy paralleling. Its positive temperature coefficient of VCE(sat) ensures inherent current sharing among parallel modules. Furthermore, its exceptionally low Thermal Resistance (Rth(j-c)) provides an efficient path for heat to the heatsink. For optimal performance, we recommend a symmetrical busbar layout and ensuring uniform mounting pressure across all modules. For detailed application notes on thermal design, contact our technical team.

2. What gate drive considerations are crucial for this high-current module?

A robust gate drive design is essential. Due to the high current switching, a Kelvin Emitter connection is provided to bypass stray inductance from the main load path, ensuring a clean gate signal. We recommend a gate voltage of +15V for turn-on and a negative voltage of -8V to -15V for turn-off to provide strong immunity against parasitic turn-on induced by the Miller effect.

For engineers designing the next generation of high-power systems, the AAF2412NFFWN offers a foundation of efficiency, power density, and proven reliability. Explore our library of resources to learn more about the critical role of IGBT modules in modern electronics.

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