Content last revised on July 28, 2026
Mitsubishi Electric CM150DU-34KA 1700V 150A IGBT Module
Technical Overview & Highlight Summary
Mitigating High-Voltage Conduction Losses with CSTBT Technology
How can power electronics designers minimize conduction losses in 1700V high-voltage drives while maintaining robust electrical isolation? The Mitsubishi Electric CM150DU-34KA addresses this challenge directly. By utilizing advanced Carrier Stored Trench Bipolar Transistor (CSTBT™) technology, this dual IGBT module balances conduction efficiency with switching performance, making it highly effective for heavy-duty industrial systems.
What is the primary benefit of the CSTBT design? Reduced collector-emitter saturation voltage for minimized conduction losses.
How does the isolated baseplate improve system reliability? By simplifying heatsink assembly and preventing electrical tracking to the chassis.
- Collector-Emitter Voltage (VCES): 1700V
- Continuous Collector Current (IC): 150A
- Maximum Power Dissipation (PC): 1100W
- Configuration: Half-Bridge (Dual)
- Isolation Voltage (Viso): 3500 Vrms
Frequently Asked Questions
Factual Engineering Solutions for Common Power Drive Inquiries
How does the typical VCE(sat) of 3.2V in the CM150DU-34KA affect thermal design under continuous operation?
The typical collector-emitter saturation voltage is 3.2V (measured at Tj = 25°C, VGE = 15V, IC = 150A). It rises to a typical value of 3.8V at Tj = 125°C. A lower saturation voltage reduces conduction losses, allowing engineers to size smaller heatsinks and enhance overall system power density.
What are the benefits of the Kelvin emitter connections in this module?
The auxiliary Kelvin emitter terminals isolate the gate drive control loop from the main high-current power path. This minimizes voltage spikes caused by stray emitter inductance during high di/dt switching transitions, ensuring reliable gate control.
Key Parameter Overview
Function-Grouped Technical Specifications for CM150DU-34KA
| Group | Parameter | Symbol | Value / Test Conditions |
|---|---|---|---|
| Absolute Maximum Ratings (Tj = 25°C) | Collector-Emitter Voltage | VCES | 1700V (G-E short) |
| Collector Current | IC | 150A (continuous, TC = 112°C) | |
| Gate-Emitter Voltage | VGES | ±20V (C-E short) | |
| Maximum Collector Dissipation | PC | 1100W | |
| Electrical Characteristics (Tj = 25°C) | Collector-Emitter Saturation Voltage | VCE(sat) | 3.2V (Typ) / 4.0V (Max) (IC = 150A, VGE = 15V) |
| Gate-Emitter Threshold Voltage | VGE(th) | 5.5V to 8.5V (IC = 15mA, VCE = 10V) | |
| Input Capacitance | Cies | 21nF (Typ) (VCE = 10V, VGE = 0V) | |
| Thermal and Mechanical | Junction-to-Case Thermal Resistance | Rth(j-c)Q | 0.14 °C/W (Max per IGBT) |
| Mounting Torque (M6 Terminals) | — | 3.5 to 4.5 N·m | |
| Weight | — | 400g (Typical) |
Download the CM150DU-34KA datasheet for detailed specifications and performance curves.
Technical Deep Dive
Optimizing Junction-to-Case Heat Transfer and Switching Performance
The core technology behind the CM150DU-34KA is the CSTBT™ (Carrier Stored Trench Bipolar Transistor) structure. This design acts like a microscopic traffic dam, pooling holes near the emitter side to increase carrier concentration in the drift region. This carrier accumulation is analogous to opening a wider water pipe, allowing a larger volume of current to flow through the device with a lower voltage drop, reducing overall VCE(sat).
To keep the silicon operating within safe limits, thermal dissipation must be highly efficient. Junction-to-case thermal resistance (Rth(j-c)) can be understood as a physical bottleneck, similar to a narrow highway tollgate. The Rth(j-c)Q rating of 0.14 °C/W per IGBT ensures that dissipated heat is quickly conducted away to the cooling heatsink. By minimizing this resistance, the module prevents thermal hotspots, thereby extending device lifespan under continuous load.
For field diagnostic and preventive maintenance, engineers can consult our guide on testing IGBT modules with a multimeter. Proper installation is critical to achieving these thermal performance metrics, including applying thermal grease uniformly to the copper baseplate. To prevent catastrophic failure modes under high stress, design teams should also review standard guidelines for IGBT failure analysis.
Application Scenarios & Value
Fulfilling High-Efficiency Demands in VFD and Grid Inverters
For 1700V industrial motor drives prioritizing conduction efficiency over switching frequency, this 150A half-bridge module is the optimal choice. In typical variable frequency drive (VFD) applications, motor startup transients create severe current stress. The CM150DU-34KA is rated for a peak collector current (ICM) of 300A, providing a safe operating margin during transient overloads.
In addition to VFD systems, the module is widely used in high-power uninterruptible power supplies (UPS) and grid-tied solar inverters. Its half-bridge configuration simplifies design by integrating the phase leg inside a single package, reducing parasitic layout inductance. For systems requiring alternative ratings, the CM150DU-24F offers a 1200V option, while the CM300DY-34A provides higher current capability up to 300A.
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