#Powerex Inc, #CM200RL_24NF, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, High power switching use
Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:200A Collector current Icp:400A Collector power dissipation Pc:1160W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting M5 screw torque 2.5~3.5 N·m Weight Typical value 750g