#MITSUBISHI, #CM75TJ_24F, #IGBT_Module, #IGBT, CM75TJ-24F Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,; CM75TJ-24F
Manufacturer Part Number: CM75TJ-24FPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X39Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.71Case Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X39Number of Elements: 6Number of Terminals: 39Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 357 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,