Mitsubishi CM75YE13-12F IGBT Module

Mitsubishi CM75YE13-12F | Engineered for High-Efficiency Power Conversion

The Mitsubishi CM75YE13-12F is a 600V/75A six-pack IGBT module designed for engineers who prioritize thermal efficiency and reliability in demanding, medium-power applications. Leveraging Mitsubishi's advanced chip technology, this module provides a robust solution for motor control and power conversion systems where minimizing conduction losses is a critical design parameter.

Technical Deep-Dive: The Engineering Behind the Performance

The standout performance of the Mitsubishi CM75YE13-12F is rooted in its sophisticated silicon design. Two key characteristics define its value proposition for power system engineers:

• Carrier Stored Trench-Gate Bipolar Transistor (CSTBT™) Technology: This is a proprietary Mitsubishi CSTBT™ structure. Unlike standard trench-gate IGBTs, it incorporates an additional carrier storage layer in the N-drift region. This innovation significantly enhances conductivity modulation, allowing for a remarkably low collector-emitter saturation voltage (VCE(sat)) without a proportional increase in switching losses. For the designer, this translates directly to lower conduction losses, reducing heatsink requirements and improving overall system efficiency.
• Optimized Free-Wheeling Diode (FWD): The integrated FWD is co-packed and performance-matched to the IGBT. It is engineered for a low forward voltage drop (Vf) and soft recovery characteristics. This is crucial for reducing diode conduction losses and mitigating voltage overshoot and EMI during turn-off, which simplifies the design of snubber circuits and enhances system reliability. A poorly matched diode can lead to oscillations and increase the risk of IGBT failure under hard-switching conditions.

Key Electrical Parameters

The following table provides a quick reference for the core specifications of the CM75YE13-12F. For a comprehensive overview, please download the official datasheet.

Application Suitability and Value Proposition

The specific characteristics of the CM75YE13-12F make it an exceptional choice for the following applications:

• General Purpose Inverters & Variable Frequency Drives (VFDs): In motor drives operating at lower to moderate switching frequencies (typically 2-10 kHz), conduction losses often dominate total power loss. The module's very low VCE(sat) directly addresses this pain point, enabling higher efficiency and more compact drive designs.
• Uninterruptible Power Supplies (UPS): The module's robust thermal performance and high reliability are critical for UPS systems, where uptime is paramount. Its efficiency reduces the thermal load within the enclosure, extending the life of other temperature-sensitive components like capacitors.
• Servo Drives and Actuators: While these applications require dynamic performance, the low VCE(sat) of the Mitsubishi CM75YE13-12F ensures precise control without excessive heat generation, making it suitable for compact, high-torque robotic servo drives and industrial actuators.

Selection Guidance: A Workhorse for Conduction-Dominated Designs

When selecting from a range of IGBT modules, it's a game of trade-offs. The CM75YE13-12F is explicitly optimized for low conduction loss. If your design operates at very high switching frequencies (>15-20 kHz), you might consider a module with lower Eon/Eoff values, which would likely come with a higher VCE(sat). However, for the vast majority of industrial motor drives, pumps, fans, and UPS systems, the CM75YE13-12F represents a highly optimized balance of performance, efficiency, and proven Mitsubishi reliability. Its design philosophy directly targets the most significant source of power loss in these mainstream applications, offering a clear path to a more efficient and thermally stable system. For further questions on application-specific selection, please contact our technical team for an in-depth consultation.