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FUJI ETN81-055

  • ETN81-055
  • ETN81-055 FUJI Power Bipolar Transistor, 200A 600V

    · Categories: IGBT
    · Manufacturer: FUJI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 900
    90-Day Warranty
    Global Shipping
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on November 15, 2024

    Including Free Wheeling Diode
    High DC Current Gain
    Insulated Type
    600 volts class power transistor modules
    Power transistors and free wheel diodes are built into one package.
    All terminals are insulated from mounting plate.
    Suited for motor control applications with 220 to 240 volts inputs.
    All terminals are screw-clamp type.

    Absolute maximum ratings (Tc=25°C unless without specified)
    Collector-Emitter voltage Vces:600V
    Collector-Emitter voltage Vces:550V
    Gate-Emitter voltage VGES:±20V
    Collector current Ic Continuous Tc=25°C :200A
    Collector current Icp 1ms Tc=25°C :400A
    Collector power dissipation Pc:1000W
    Isolation Voltage VIsol (AC 1 minute) :2500V
    Operating junction temperature Tj:+150°C
    Storage temperature Tstg :-40 to +125°C

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