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FUJI EVL32-055 IGBT Module

EVL32-055

EVL32-055 FUJI Power Bipolar Transistor, 120A 600V, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 2024+
. Available Qty: 567
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EVL32-055 Specification

Features

Including Free Wheeling Diode
High DC Current Gain
Insulated Type
600 volts class power transistor modules
Power transistors and free wheel diodes are built into one package.
All terminals are insulated from mounting plate.
Suited for motor control applications with 220 to 240 volts inputs.
All terminals are screw-clamp type.

Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Collector-Emitter voltage Vces:550V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :120A
Collector current Icp 1ms Tc=25°C :240A
Collector power dissipation Pc:500W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

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