Infineon FF200R12KE3 IGBT Module

FF200R12KE3

Product Category: IGBT Modules  FF200R12KE3

Manufacturer: Infineon

RoHS: YES

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 200 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1.05 kW

Package / Case: IS5a ( 62 mm )-7

Maximum Operating Temperature: + 125 C

Brand: Infineon Technologies

Height: 30.9 mm

Length: 106.4 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 61.4 mm

IGBT Modules 1200V 200A DUAL