Infineon FF450R17ME4_B11 IGBT Module

FF450R17ME4_B11 DatasheetKollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1700 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 450A~605APeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 900AGesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot 2250WGate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20VTemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40~125 °CDiode,Wechselrichter/Diode,InverterPeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 1700 VDauergleichstrom ContinuousDCforwardcurrent IF 450 APeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 900 AGrenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 20000 A²s

EconoDUAL™3 module with trench/fieldstop IGBT³ and Emitter Controlled 3 diode and NTC