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FP100R12KT4-B11,
# EUPEC #FP100R12KT4-B11 New Stock, FP100R12KT4-B11 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; FP100R12KT4-B11, #IGBT_Module, #IGBT, #FP100R12KT4_B11
Email: sales@shunlongwei.com
URL:
https://www.slw-ele.com/fp100r12kt4-b11.html
Manufacturer Part Number: FP100R12KT4_B11
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer:
Infineon TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X35
Pin Count: 35
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 2.16
Case Connection: ISOLATED
Collector Current-Max (IC): 100 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X35
Number of Elements: 7
Number of Terminals: 35
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 515 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
