The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon. This module is part of the EconoPIM™3 series and features a fast trench/field-stop IGBT3 along with an emitter-controlled high-efficiency diode. It is designed for various applications and offers high-performance characteristics.
Key Specifications:
- Configuration: Hex
- Collector-Emitter Voltage (VCEO Max): 1200 V
- Collector-Emitter Saturation Voltage: 2.15 V
- Continuous Collector Current at 25°C: 105 A
- Gate-Emitter Leakage Current: 400 nA
- Maximum Operating Temperature: +125°C
- Package / Case: Econo 3
- Mounting Style: Screw
- Pd - Power Dissipation: 355 W
- Maximum Gate Emitter Voltage: +/- 20 V
- Minimum Operating Temperature: -40°C
- Factory Pack Quantity: 10
- Product: IGBT Silicon Modules
- Application: IGBT, Inverter
