Infineon FS225R12KE3 IGBT Module

FS225R12KE3

Product Category: IGBT Modules

Manufacturer: Infineon

RoHS: No

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 325 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1.15 kW

Package / Case: EconoPACK+

Maximum Operating Temperature: + 125 C

Packaging: Tray

Brand: Infineon Technologies

Height: 17 mm

Length: 162 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 4

Width: 150 mm