Content last revised on January 8, 2025
FS225R12KE3
Product Category: IGBT Modules
Manufacturer: Infineon
RoHS: No
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 325 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1.15 kW
Package / Case: EconoPACK+
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 17 mm
Length: 162 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 4
Width: 150 mm
