#Eupec, #FS225R12KE3, #IGBT_Module, #IGBT, FS225R12KE3 IGBT Modules 1200V 225A 3-PHASE ; FS225R12KE3
FS225R12KE3 Product Category: IGBT Modules Manufacturer: Infineon RoHS: No Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.7 V Continuous Collector Current at 25 C: 325 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1.15 kW Package / Case: EconoPACK+ Maximum Operating Temperature: + 125 C Packaging: Tray Brand: Infineon Technologies Height: 17 mm Length: 162 mm Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 4 Width: 150 mm IGBT Modules 1200V 225A 3-PHASE