Content last revised on June 18, 2025
FZ1200R12KF4
Product Category: IGBT Modules
Manufacturer: Infineon
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.7 V
Continuous Collector Current at 25 C: 1200 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 7.8 kW
Package / Case: IHM130
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 38 mm
Length: 140 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: SMD/SMT
Factory Pack Quantity: 2
Width: 130 mm
IGBT Modules 1200V 1200A SINGLE
Related Post: https://www.slw-ele.com/evaluation-and-comparison-of-infineon-fz1200-series-igbt-modules.html
