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Infineon FZ1800R12KF4_S1 IGBT Module

FZ1800R12KF4_S1

Infineon FZ1800R12KF4_S1: A 1200V/1800A IGBT module. Its proven Trench/Field-Stop tech and low-inductance design deliver superior reliability and efficiency for high-power conversion.

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 280
· Date Code: 2019+
. Available Qty: 213
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FZ1800R12KF4_S1 Specification

Infineon FZ1800R12KF4_S1 | Dominating High-Power Conversion with Proven Reliability

The Infineon FZ1800R12KF4_S1 is a high-power IGBT module engineered for the most demanding applications in industrial drives, renewable energy, and grid infrastructure. This module establishes a benchmark for reliability and performance, delivering a massive 1800A and 1200V capacity. It is specifically designed for developers of high-power inverters and converters who require a robust, efficient, and proven solution for managing significant energy flows. The FZ1800R12KF4_S1 is not just a component; it's a cornerstone for building resilient and powerful systems.

Technical Deep Dive: The Engineering Behind 1800A Performance

The exceptional capability of the Infineon FZ1800R12KF4_S1 stems from its sophisticated internal architecture and packaging. Two core features define its performance advantage in high-current scenarios:

  • Trench/Field-Stop IGBT4 Technology: This mature and highly optimized technology is the engine of the module. The trench gate structure provides a very low on-state voltage (VCE(sat)), which directly translates to lower conduction losses—a critical factor when managing currents up to 1800A. The Field-Stop layer works in concert to enable fast and controlled turn-off, minimizing switching losses. This combination ensures high operational efficiency, reducing the thermal load on the entire system.
  • Low-Inductance 62mm Package Design: At high currents and switching frequencies, stray inductance within the module package can cause detrimental voltage overshoots. The FZ1800R12KF4_S1 is housed in a 62mm standard housing, meticulously designed for low internal inductance. This robust packaging minimizes oscillations during switching transients, ensuring safer operation within the Safe Operating Area (SOA) and simplifying the design of external snubber circuits. Its layout is also optimized for straightforward paralleling to achieve even higher power outputs.

Key Parameter Overview

Engineers require precise data for system design and simulation. The table below summarizes the critical electrical and thermal characteristics of the FZ1800R12KF4_S1. For a complete set of parameters and characteristic curves, please download the official datasheet.

Parameter Value
Collector-Emitter Voltage (V_CES) 1200 V
Continuous Collector Current (I_C) @ T_C=80°C 1800 A
Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=1800A, T_j=125°C 2.10 V (Typ.)
Short-Circuit Withstand Time (t_sc) 10 µs
Thermal Resistance, Junction-to-Case (R_th(j-c)) per IGBT ≤ 0.008 K/W
Maximum Junction Temperature (T_j,max) 150 °C

Application Focus: Where the FZ1800R12KF4_S1 Excels

The raw power and robust design of the FZ1800R12KF4_S1 make it an ideal solution for several key high-power sectors:

  • Wind Turbine Converters: As a critical link between the generator and the grid, this module can handle the high currents and fluctuating power characteristic of wind energy generation. Its proven reliability ensures maximum uptime, which is vital for wind-to-grid conversion systems.
  • High-Power Industrial Drives: In applications such as large-scale pumps, compressors, and mining equipment, the FZ1800R12KF4_S1 provides the muscle for precise and efficient motor control. Its high efficiency minimizes cooling system size and operational costs.
  • Grid-Scale Energy Solutions: For applications like STATCOMs, large-scale uninterruptible power supplies (UPS), and grid-tied battery storage systems, this IGBT module offers the high current capacity and robustness necessary for stable and reliable power flow management.

Selection & Comparative Insights

Choosing the right IGBT module involves balancing performance, packaging, and system-level goals. While the FZ1800R12KF4_S1 is a powerhouse in the 62mm package, designers looking for even higher current density might consider the FZ2400R12HP4. The FZ2400R12HP4, housed in a PrimePACK™ package, offers a staggering 2400A rating. The selection between these two depends on specific engineering priorities: the FZ1800R12KF4_S1 provides exceptional performance in a widely adopted standard housing, simplifying sourcing and mechanical design. In contrast, the FZ2400R12HP4 leverages a more advanced package to maximize power density, potentially reducing the number of parallel modules needed for multi-megawatt systems. Understanding these trade-offs is a key part of the in-depth analysis of IGBT modules.

Engineered for Longevity and System Stability

The Infineon FZ1800R12KF4_S1 embodies a design philosophy centered on long-term reliability. Its robust thermal design, characterized by a very low thermal resistance, ensures efficient heat extraction, which is fundamental to achieving high Power Cycling Capability and a long operational lifespan. For mission-critical applications where failure is not an option, the proven performance of the IGBT4 technology from a leading manufacturer like Infineon provides the necessary confidence. This focus on durability makes it a strategic choice for infrastructure projects with service life requirements spanning decades. For further inquiries about integrating this high-power module into your design, please contact our technical team.

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